Parameter Name | Attribute value |
FET type | N and P channel |
FET function | standard |
Drain-source voltage (Vdss) | 20V |
Current - Continuous Drain (Id) at 25°C | 3A,2.5A |
Rds On (maximum value) when different Id, Vgs | 125 milliohms @ 1A, 10V |
Vgs (th) (maximum value) when different Id | 1V @ 250µA |
Gate charge (Qg) at different Vgs (maximum value) | 25nC @ 10V |
Input capacitance (Ciss) at different Vds (maximum value) | 300pF @ 15V |
Power - Max | 2W |
Installation type | surface mount |
Package/casing | 8-SOIC (0.154", 3.90mm wide) |
Supplier device packaging | 8-SO |