Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IRF340 | International Rectifier ( Infineon ) | POWER, FET | Download |
IRF340 | Fairchild | POWER, FET | Download |
IRF340 | SAMSUNG | POWER, FET | Download |
IRF340 | New Jersey Semiconductor | POWER, FET | Download |
IRF340 | Rochester Electronics | 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Download |
IRF340 | Texas Instruments | IRF340 | Download |
IRF340 | Infineon | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Download |
IRF340 | Motorola ( NXP ) | 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Download |
IRF340 | TT Electronics plc | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Download |
IRF340 | Vishay | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Download |
IRF340 | SEMELAB | 10A, 400V, 0.63ohm, N-CHANNEL, Si, POWER, MOSFET | Download |
IRF340 | ISC | isc N-Channel MOSFET Transistor | Download |
IRF340_15 | International Rectifier ( Infineon ) | Repetitive Avalanche Ratings | Download |
IRF340-343 | Fairchild | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | Download |
IRF340E | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Download |
IRF340EA | Infineon | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Download |
IRF340EA | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Download |
IRF340EAPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Download |
IRF340EB | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Download |
IRF340EBPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Download |
IRF340EC | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Download |
IRF340ECPBF | Infineon | 10A, 400V, 0.63ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Download |
IRF340ECPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Download |
IRF340ED | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Download |
IRF340ED | Infineon | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Download |
IRF340EDPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Download |
IRF340EDPBF | Infineon | 10A, 400V, 0.63ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Download |
IRF340EPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Download |
IRF340EPBF | Infineon | 10A, 400V, 0.63ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Download |
IRF340-JQR-B | TT Electronics plc | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Download |
Part Number | Datasheet |
---|---|
IRF340 、 IRF340 、 IRF340-JQR-B 、 IRF340-JQR-B 、 IRF340-JQR-BR1 、 IRF340-JQR-BR1 、 IRF340R1 、 IRF340R1 、 IRF340SMD-JQR-B 、 IRF340SMD-JQR-B | Download Datasheet |
IRF340EA 、 IRF340ECPBF 、 IRF340ED 、 IRF340EDPBF 、 IRF340EPBF | Download Datasheet |
IRF340 、 IRF340 、 IRF340PBF | Download Datasheet |
IRF340 、 IRF340-343 | Download Datasheet |
IRF340R | Download Datasheet |
IRF340_15 | Download Datasheet |
IRF340R | Download Datasheet |
IRF340 | Download Datasheet |
IRF340 | Download Datasheet |
IRF340 | Download Datasheet |
Part Number | IRF340-JQR-B | IRF340 | IRF340 | IRF340-JQR-B | IRF340-JQR-BR1 | IRF340-JQR-BR1 | IRF340R1 | IRF340R1 | IRF340SMD-JQR-B | IRF340SMD-JQR-B |
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Description | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10A, 400V, 0.63ohm, N-CHANNEL, Si, POWER, MOSFET | 10A, 400V, 0.63ohm, N-CHANNEL, Si, POWER, MOSFET | 10A, 400V, 0.63ohm, N-CHANNEL, Si, POWER, MOSFET | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10A, 400V, 0.63ohm, N-CHANNEL, Si, POWER, MOSFET | Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 10A, 400V, 0.63ohm, N-CHANNEL, Si, POWER, MOSFET |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | conform to | conform to | conform to | conform to | incompatible | incompatible |
Maker | TT Electronics plc | TT Electronics plc | SEMELAB | SEMELAB | SEMELAB | TT Electronics plc | TT Electronics plc | SEMELAB | TT Electronics plc | SEMELAB |
Reach Compliance Code | compli | compli | compli | compli | compli | compliant | compliant | compliant | compliant | compliant |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum drain-source breakdown voltage | 400 V | 400 V | 400 V | 400 V | 400 V | 400 V | 400 V | 400 V | 400 V | 400 V |
Maximum drain current (ID) | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A |
Maximum drain-source on-resistance | 0.63 Ω | 0.63 Ω | 0.63 Ω | 0.63 Ω | 0.63 Ω | 0.63 Ω | 0.63 Ω | 0.63 Ω | 0.63 Ω | 0.63 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-XUUC-N3 | R-XUUC-N3 | R-XUUC-N3 | R-XUUC-N3 | R-XUUC-N3 | R-XUUC-N3 | R-XUUC-N3 | R-XUUC-N3 | R-XUUC-N3 | R-XUUC-N3 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | UNCASED CHIP | UNCASED CHIP | UNCASED CHIP | UNCASED CHIP | UNCASED CHIP | UNCASED CHIP | UNCASED CHIP | UNCASED CHIP | UNCASED CHIP | UNCASED CHIP |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
Terminal location | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
package instruction | - | UNCASED CHIP, R-XUUC-N3 | UNCASED CHIP, R-XUUC-N3 | UNCASED CHIP, R-XUUC-N3 | UNCASED CHIP, R-XUUC-N3 | - | - | UNCASED CHIP, R-XUUC-N3 | UNCASED CHIP, R-XUUC-N3 | UNCASED CHIP, R-XUUC-N3 |