Part Number |
H5TC2G43BFR-PBA |
H5TC2G43BFR-G7A |
H5TC2G43BFR-H9A |
Description |
DDR DRAM, 512MX4, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82 |
DDR DRAM, 512MX4, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82 |
DDR DRAM, 512MX4, CMOS, PBGA82, HALOGEN FREE AND ROHS COMPLIANT, FBGA-82 |
Is it Rohs certified? |
conform to |
conform to |
conform to |
Parts packaging code |
BGA |
BGA |
BGA |
package instruction |
TFBGA, BGA82,11X13,32 |
TFBGA, BGA82,11X13,32 |
TFBGA, BGA82,11X13,32 |
Contacts |
82 |
82 |
82 |
Reach Compliance Code |
unknown |
unknown |
unknown |
ECCN code |
EAR99 |
EAR99 |
EAR99 |
access mode |
MULTI BANK PAGE BURST |
MULTI BANK PAGE BURST |
MULTI BANK PAGE BURST |
Other features |
AUTO/SELF REFRESH |
AUTO/SELF REFRESH |
AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) |
800 MHz |
533 MHz |
667 MHz |
I/O type |
COMMON |
COMMON |
COMMON |
interleaved burst length |
4,8 |
4,8 |
4,8 |
JESD-30 code |
S-PBGA-B82 |
S-PBGA-B82 |
S-PBGA-B82 |
JESD-609 code |
e1 |
e1 |
e1 |
length |
11 mm |
11 mm |
11 mm |
memory density |
2147483648 bit |
2147483648 bit |
2147483648 bit |
Memory IC Type |
DDR DRAM |
DDR DRAM |
DDR DRAM |
memory width |
4 |
4 |
4 |
Number of functions |
1 |
1 |
1 |
Number of ports |
1 |
1 |
1 |
Number of terminals |
82 |
82 |
82 |
word count |
536870912 words |
536870912 words |
536870912 words |
character code |
512000000 |
512000000 |
512000000 |
Operating mode |
SYNCHRONOUS |
SYNCHRONOUS |
SYNCHRONOUS |
Maximum operating temperature |
85 °C |
85 °C |
85 °C |
organize |
512MX4 |
512MX4 |
512MX4 |
Output characteristics |
3-STATE |
3-STATE |
3-STATE |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
encapsulated code |
TFBGA |
TFBGA |
TFBGA |
Encapsulate equivalent code |
BGA82,11X13,32 |
BGA82,11X13,32 |
BGA82,11X13,32 |
Package shape |
SQUARE |
SQUARE |
SQUARE |
Package form |
GRID ARRAY, THIN PROFILE, FINE PITCH |
GRID ARRAY, THIN PROFILE, FINE PITCH |
GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) |
260 |
260 |
260 |
power supply |
1.35 V |
1.35 V |
1.35 V |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
refresh cycle |
8192 |
8192 |
8192 |
Maximum seat height |
1.2 mm |
1.2 mm |
1.2 mm |
self refresh |
YES |
YES |
YES |
Continuous burst length |
4,8 |
4,8 |
4,8 |
Maximum standby current |
0.01 A |
0.01 A |
0.01 A |
Maximum slew rate |
0.165 mA |
0.16 mA |
0.16 mA |
Maximum supply voltage (Vsup) |
1.45 V |
1.45 V |
1.45 V |
Minimum supply voltage (Vsup) |
1.283 V |
1.283 V |
1.283 V |
Nominal supply voltage (Vsup) |
1.35 V |
1.35 V |
1.35 V |
surface mount |
YES |
YES |
YES |
technology |
CMOS |
CMOS |
CMOS |
Temperature level |
OTHER |
OTHER |
OTHER |
Terminal surface |
Tin/Silver/Copper (Sn/Ag/Cu) |
Tin/Silver/Copper (Sn/Ag/Cu) |
Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal form |
BALL |
BALL |
BALL |
Terminal pitch |
0.8 mm |
0.8 mm |
0.8 mm |
Terminal location |
BOTTOM |
BOTTOM |
BOTTOM |
Maximum time at peak reflow temperature |
20 |
20 |
20 |
width |
9.4 mm |
9.4 mm |
9.4 mm |
Maker |
- |
SK Hynix |
SK Hynix |