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Showing 37 Results for c2m, including C2M0025120D,C2M0045170D, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
C2M0025120D Wolfspeed (Cree) Through hole N channel 1200 V 90A (Tc) 463W (Tc) TO-247-3 Download
C2M0045170D Wolfspeed (Cree) Through hole N channel 1700 V 72A (Tc) 520W (Tc) TO-247-3 Download
C2M1000170D Wolfspeed (Cree) Through hole N channel 1700 V 4.9A (Tc) 69W (Tc) TO-247-3 Download
C2M0025120D Cree MOSFET SIC MOSFET 1200V RDS ON 25 mOhm Download
C2M0025120D PulseLarsen Antennas MOSFET N-CH 1200V 90A TO-247 Download
C2M0040120D Cree MOSFET SiC Power MOSFET 1200V, 60A Download
C2M0040120D PulseLarsen Antennas MOSFET N-CH 1200V 60A TO-247 Download
C2M0040120D_15 Cree N-Channel Enhancement Mode Download
C2M0045170D Cree Programmers - Processor Based PSoC Miniprog3 Kit for PSoC 1, 3, 5 Download
C2M0045170D PulseLarsen Antennas MOSFET NCH 1.7KV 72A TO247 Download
C2M0045170P PulseLarsen Antennas ZFET SIC DMOSFET, 1700V VDS, RDS Download
C2M0045170P Cree Silicon Carbide Power MOSFET C2M MOSFET Technology Download
C2M0080120D PulseLarsen Antennas MOSFET N-CH 1200V 31.6A TO247 Download
C2M0080120D Cree MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT Download
C2M0080120D_15 Cree Silicon Carbide Power MOSFET Download
C2M0080170D Wolfspeed (Cree) MOSFET SIC MOSFET 1700V RDS ON 80OHM Download
C2M0080170P PulseLarsen Antennas ZFET SIC DMOSFET, 1700V VDS, RDS Download
C2M0080170P Cree Silicon Carbide Power MOSFET C2M MOSFET Technology Download
C2M0160120D Cree Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET Download
C2M0160120D PulseLarsen Antennas MOSFET N-CH 1200V 19A TO-247 Download
C2M0160120D_15 Cree Silicon Carbide Power MOSFET Download
C2M0280120D Cree MOSFET SIC MOSFET 1200V RDS ON 280 mOhm Download
C2M0280120D PulseLarsen Antennas MOSFET N-CH 1200V 10A TO-247-3 Download
C2M1000170D Cree MOSFET SIC MOSFET 1700V RDS ON 1 Ohm Download
C2M1000170D PulseLarsen Antennas MOSFET N-CH 1700V 4.9A TO247 Download
C2M1000170D_15 Cree Silicon Carbide Power MOSFET Download
C2M1000170J Cree Drain-source voltage (Vdss): 1700V Continuous drain current (Id) (at 25°C): 5.3A (Tc) Gate-source threshold voltage: 3.1V @ 500uA (standard) Drain-source on-resistance: 1.4Ω @ 2A ,20V Maximum power dissipation (Ta=25°C): 78W(Tc) Type: N-channel Download
C2M1000170J PulseLarsen Antennas MOSFET N-CH 1700V 5.3A TO247 Download
C2M1000170J Wolfspeed (Cree) Trans MOSFET N-CH SiC 1.7KV 5.3A 8-Pin(7+Tab) D2PAK Tube Download
C2M1000170J-TR Cree MOSFET SIC MOSFET 1700V RDS ON 1 Ohm Download
c2m Related Product Datasheets:
Part Number Datasheet
C2M1000170J 、 C2M1000170J-TR Download Datasheet
C2M1000170J 、 C2M1000170J-TR Download Datasheet
C2M1000170D Download Datasheet
C2M1000170D_15 Download Datasheet
C2M1000170D Download Datasheet
C2M0280120D Download Datasheet
C2M0280120D Download Datasheet
C2M60-28 Download Datasheet
C2M1000170J Download Datasheet
C2M60-28 Download Datasheet
c2m Related Products:
Part Number C2M1000170J C2M1000170J-TR
Description MOSFET N-CH 1700V 5.3A TO247 MOSFET N-CH 1700V 5.3A TO247
FET type N channel N channel
technology SiCFET (silicon carbide) SiCFET (silicon carbide)
Drain-source voltage (Vdss) 1700V 1700V
Current - Continuous Drain (Id) at 25°C 5.3A(Tc) 5.3A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 20V 20V
Rds On (maximum value) when different Id, Vgs 1.4 ohms @ 2A, 20V 1.4 ohms @ 2A, 20V
Vgs (th) (maximum value) when different Id 3.1V @ 500µA (standard) 3.1V @ 500µA (standard)
Gate charge (Qg) at different Vgs (maximum value) 13nC @ 20V 13nC @ 20V
Vgs (maximum value) +25V,-10V +25V,-10V
Input capacitance (Ciss) at different Vds (maximum value) 200pF @ 1000V 200pF @ 1000V
Power dissipation (maximum) 78W(Tc) 78W(Tc)
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type surface mount surface mount
Supplier device packaging D2PAK(7-Lead) D2PAK-7
Package/casing TO-263-7 (straight lead) TO-263-8, D²Pak (7 leads + tabs), TO-263CA

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