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ZXM61N02F

Showing 8 Results for ZXM61N02F, including ZXM61N02F,ZXM61N02F, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
ZXM61N02F Diodes 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
ZXM61N02F Zetex Semiconductors 20v N-channel enhancement mode mosfet Download
ZXM61N02F_15 Diodes 20V N-CHANNEL ENHANCEMENT MODE MOSFET Download
ZXM61N02FTA Zetex Semiconductors 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
ZXM61N02FTA VBsemi Electronics Co. Ltd. N-Channel 20 V (D-S) MOSFET Download
ZXM61N02FTA Diodes Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 1.7A Gate-source threshold voltage: 700mV @ 250uA Drain-source on-resistance: 180mΩ @ 930mA, 4.5V Maximum power dissipation ( Ta=25°C): 625mW Type: N-channel N-channel, 20V, 1.7A, 180mΩ@4.5V Download
ZXM61N02FTC Zetex Semiconductors 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
ZXM61N02FTC Diodes USB Interface IC USB to Serial UART Enhanced IC QFN-32 Download
ZXM61N02F Related Product Datasheets:
Part Number Datasheet
ZXM61N02FTA 、 ZXM61N02FTC Download Datasheet
ZXM61N02FTC Download Datasheet
ZXM61N02FTA Download Datasheet
ZXM61N02F_15 Download Datasheet
ZXM61N02F Download Datasheet
ZXM61N02F Download Datasheet
ZXM61N02F Related Products:
Part Number ZXM61N02FTA ZXM61N02FTC
Description 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals 3 3
Minimum breakdown voltage 20 V 20 V
Processing package description SOT-23, 3 PIN SOT-23, 3 PIN
Lead-free Yes Yes
EU RoHS regulations Yes Yes
China RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape Rectangle RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE Tin MATTE TIN
Terminal location pair DUAL
Packaging Materials Plastic/Epoxy PLASTIC/EPOXY
structure Single WITH BUILT-IN diode SINGLE WITH BUILT-IN DIODE
Number of components 1 1
transistor applications switch SWITCHING
Transistor component materials silicon SILICON
Channel type N channel N-CHANNEL
field effect transistor technology Metal-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type Universal small signal GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current 1.7 A 1.7 A
Maximum drain on-resistance 0.1800 ohm 0.1800 ohm

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