Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
ZXM61N02F | Diodes | 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Download |
ZXM61N02F | Zetex Semiconductors | 20v N-channel enhancement mode mosfet | Download |
ZXM61N02F_15 | Diodes | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Download |
ZXM61N02FTA | Zetex Semiconductors | 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Download |
ZXM61N02FTA | VBsemi Electronics Co. Ltd. | N-Channel 20 V (D-S) MOSFET | Download |
ZXM61N02FTA | Diodes | Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 1.7A Gate-source threshold voltage: 700mV @ 250uA Drain-source on-resistance: 180mΩ @ 930mA, 4.5V Maximum power dissipation ( Ta=25°C): 625mW Type: N-channel N-channel, 20V, 1.7A, 180mΩ@4.5V | Download |
ZXM61N02FTC | Zetex Semiconductors | 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Download |
ZXM61N02FTC | Diodes | USB Interface IC USB to Serial UART Enhanced IC QFN-32 | Download |
Part Number | Datasheet |
---|---|
ZXM61N02FTA 、 ZXM61N02FTC | Download Datasheet |
ZXM61N02FTC | Download Datasheet |
ZXM61N02FTA | Download Datasheet |
ZXM61N02F_15 | Download Datasheet |
ZXM61N02F | Download Datasheet |
ZXM61N02F | Download Datasheet |
Part Number | ZXM61N02FTA | ZXM61N02FTC |
---|---|---|
Description | 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
Number of terminals | 3 | 3 |
Minimum breakdown voltage | 20 V | 20 V |
Processing package description | SOT-23, 3 PIN | SOT-23, 3 PIN |
Lead-free | Yes | Yes |
EU RoHS regulations | Yes | Yes |
China RoHS regulations | Yes | Yes |
state | ACTIVE | ACTIVE |
packaging shape | Rectangle | RECTANGULAR |
Package Size | SMALL OUTLINE | SMALL OUTLINE |
surface mount | Yes | Yes |
Terminal form | GULL WING | GULL WING |
terminal coating | MATTE Tin | MATTE TIN |
Terminal location | pair | DUAL |
Packaging Materials | Plastic/Epoxy | PLASTIC/EPOXY |
structure | Single WITH BUILT-IN diode | SINGLE WITH BUILT-IN DIODE |
Number of components | 1 | 1 |
transistor applications | switch | SWITCHING |
Transistor component materials | silicon | SILICON |
Channel type | N channel | N-CHANNEL |
field effect transistor technology | Metal-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
operating mode | ENHANCEMENT | ENHANCEMENT |
Transistor type | Universal small signal | GENERAL PURPOSE SMALL SIGNAL |
Maximum leakage current | 1.7 A | 1.7 A |
Maximum drain on-resistance | 0.1800 ohm | 0.1800 ohm |