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W971GG6SB25K

Showing 5 Results for W971GG6SB25K, including W971GG6SB-25,W971GG6SB25I, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
W971GG6SB-25 Winbond Electronics Corporation Memory interface type: Parallel Memory capacity: 1Gb (64M x 16) Operating voltage: 1.7V ~ 1.9V Memory type: Volatile 1-Gbit (64M x 16bit), operating voltage: 1.8V±0.1V Download
W971GG6SB25I Winbond Electronics Corporation Memory interface type: Parallel Memory capacity: 1Gb (64M x 16) Operating voltage: 1.7V ~ 1.9V Memory type: Volatile Download
W971GG6SB25I TR Winbond Electronics Corporation Dynamic Random Access Memory 1G, DDR2-800, x16, Ind temp T&R Download
W971GG6SB-25 TR Winbond Electronics Corporation DRAM 1G, DDR2-800, x16 T&R Download
W971GG6SB-25-TR Winbond Electronics Corporation Memory interface type: Parallel Memory capacity: 1Gb (64M x 16) Operating voltage: 1.7V ~ 1.9V Memory type: Volatile Download
W971GG6SB25K Related Product Datasheets:
Part Number Datasheet
W971GG6SB-25-TR 、 W971GG6SB25I Download Datasheet
W971GG6SB-25 TR 、 W971GG6SB25I TR Download Datasheet
W971GG6SB-25 Download Datasheet
W971GG6SB25K Related Products:
Part Number W971GG6SB-25 TR W971GG6SB25I TR
Description DRAM 1G, DDR2-800, x16 T&R Dynamic Random Access Memory 1G, DDR2-800, x16, Ind temp T&R
Maker Winbond Electronics Corporation Winbond Electronics Corporation
Product Category dynamic random access memory dynamic random access memory
type SDRAM - DDR2 SDRAM - DDR2
Data bus width 16 bit 16 bit
organize 64 M x 16 64 M x 16
Package/box WBGA-84 WBGA-84
storage 1 Gbit 1 Gbit
Supply voltage - max. 1.9 V 1.9 V
Supply voltage - min. 1.7 V 1.7 V
Supply current—max. 85 mA 85 mA
Minimum operating temperature 0 C - 40 C
Maximum operating temperature + 85 C + 95 C
series W971GG6SB W971GG6SB
Installation style SMD/SMT SMD/SMT
Factory packaging quantity 2500 2500
Encapsulation Reel Reel

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