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STGFL6NC60D

Among 2 related components, STGFL6NC60D have related pdf.
Part Number Manufacturer Description Datasheet
STGFL6NC60D STMicroelectronics IGBT Transistors N Ch 500V 0.250 Ohm 12A Pwr MOSFET Download
STGFL6NC60DI STMicroelectronics IGBT Transistors TO 220 ISO FULL PACK IN LINE Download
STGFL6NC60D parameters:

Description

IGBT Transistors N Ch 500V 0.250 Ohm 12A Pwr MOSFET

Parametric
Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerST(STMicroelectronics)
Parts packaging codeTO-220AB
package instructionROHS COMPLIANT, TO-220FP, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)7 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum5.75 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)22 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)122 ns
Nominal on time (ton)10.5 ns

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