EEWORLDEEWORLDEEWORLD

Part Number

Search
Datasheet >

STD110N02RT4G-VF01

Among 1 related components, STD110N02RT4G-VF01 have related pdf.
Part Number Manufacturer Description Datasheet
STD110N02RT4G-VF01 ON Semiconductor MOSFET N-CH 24V 32A DPAK Download
STD110N02RT4G-VF01 parameters:

Description

MOSFET N-CH 24V 32A DPAK

Parametric
Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)24V
Current - Continuous Drain (Id) at 25°C32A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs4.6 milliohms @ 20A, 10V
Vgs (th) (maximum value) when different Id2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)28nC @ 4.5V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)3440pF @ 20V
FET function-
Power dissipation (maximum)1.5W(Ta),110W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingDPAK
Package/casingTO-252-3, DPak (2 leads + tab), SC-63

Technical ResourceMore

ForumMore

Technical VideoMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Search Index   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Index   10 18 5D 95 DH E3 EA K8 O1 OX R8 WC WE WP X7

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号