Parameter Name | Attribute value |
FET type | N channel |
technology | MOSFET (metal oxide) |
Drain-source voltage (Vdss) | 24V |
Current - Continuous Drain (Id) at 25°C | 32A(Ta) |
Drive voltage (maximum Rds On, minimum Rds On) | 4.5V,10V |
Rds On (maximum value) when different Id, Vgs | 4.6 milliohms @ 20A, 10V |
Vgs (th) (maximum value) when different Id | 2V @ 250µA |
Gate charge (Qg) at different Vgs (maximum value) | 28nC @ 4.5V |
Vgs (maximum value) | ±20V |
Input capacitance (Ciss) at different Vds (maximum value) | 3440pF @ 20V |
FET function | - |
Power dissipation (maximum) | 1.5W(Ta),110W(Tc) |
Operating temperature | -55°C ~ 175°C(TJ) |
Installation type | surface mount |
Supplier device packaging | DPAK |
Package/casing | TO-252-3, DPak (2 leads + tab), SC-63 |