Parameter Name | Attribute value |
Brand Name | STMicroelectronics |
Maker | ST(STMicroelectronics) |
package instruction | D2PAK-3 |
Contacts | 3 |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Factory Lead Time | 12 weeks |
Avalanche Energy Efficiency Rating (Eas) | 190 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 500 V |
Maximum drain current (Abs) (ID) | 7.2 A |
Maximum drain current (ID) | 7.2 A |
Maximum drain-source on-resistance | 0.85 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSSO-G2 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 245 |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 110 W |
Maximum pulsed drain current (IDM) | 28.8 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Matte Tin (Sn) - annealed |
Terminal form | GULL WING |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |