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STB9NK50ZT4

Among 1 related components, STB9NK50ZT4 have related pdf.
Part Number Manufacturer Description Datasheet
STB9NK50ZT4 STMicroelectronics Diodes - General Purpose, Power, Switching SW 200V 200MA HS Download
STB9NK50ZT4 parameters:

Description

Diodes - General Purpose, Power, Switching SW 200V 200MA HS

Parametric
Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerST(STMicroelectronics)
package instructionD2PAK-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time12 weeks
Avalanche Energy Efficiency Rating (Eas)190 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)7.2 A
Maximum drain current (ID)7.2 A
Maximum drain-source on-resistance0.85 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)110 W
Maximum pulsed drain current (IDM)28.8 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON

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