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SI5441DC-T1-E3

Among 1 related components, SI5441DC-T1-E3 have related pdf.
Part Number Manufacturer Description Datasheet
SI5441DC-T1-E3 Vishay —— Download
SI5441DC-T1-E3 parameters:

Description

Parametric
Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay(威世)
package instructionSMALL OUTLINE, R-XDSO-C8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)3.9 A
Maximum drain-source on-resistance0.055 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XDSO-C8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON

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