Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
package instruction | SMALL OUTLINE, R-PSSO-G4 |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 18 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 80 V |
Maximum drain current (ID) | 24 A |
Maximum drain-source on-resistance | 0.045 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | MO-235 |
JESD-30 code | R-PSSO-G4 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 4 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 86 A |
surface mount | YES |
Terminal surface | Tin (Sn) |
Terminal form | GULL WING |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |