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PSMN045-80YS

Among 5 related components, PSMN045-80YS have related pdf.
Part Number Manufacturer Description Datasheet
PSMN045-80YS NXP 24 A, 80 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 Download
PSMN045-80YS Nexperia Power Field-Effect Transistor Download
PSMN045-80YS,115 NXP N-channel LFPAK 80 V 45 m? standard level MOSFET Download
PSMN045-80YS115 NXP Accelerometers Download
PSMN045-80YS,115 Nexperia MOSFET N-CH 80V 24A LFPAK Download
PSMN045-80YS parameters:

Description

Power Field-Effect Transistor

Parametric
Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PSSO-G4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)18 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (ID)24 A
Maximum drain-source on-resistance0.045 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-235
JESD-30 codeR-PSSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)86 A
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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