Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Nexperia |
package instruction | QFN3333, 8 PIN |
Reach Compliance Code | unknown |
Avalanche Energy Efficiency Rating (Eas) | 42 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (ID) | 40 A |
Maximum drain-source on-resistance | 0.014 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | S-PDSO-N5 |
Number of components | 1 |
Number of terminals | 5 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -55 °C |
Package body material | PLASTIC/EPOXY |
Package shape | SQUARE |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 180 A |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |