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PSMN014-60LS

Among 5 related components, PSMN014-60LS have related pdf.
Part Number Manufacturer Description Datasheet
PSMN014-60LS NXP N-channel enhancement mode field-effect transistor Download
PSMN014-60LS Nexperia Power Field-Effect Transistor Download
PSMN014-60LS115 NXP MOSFET N-CHAN 40V 46A Download
PSMN014-60LS,115 NXP PSMN014-60LS - N-channel DFN3333-8 60 V 14 mΩ standard level MOSFET DFN 8-Pin Download
PSMN014-60LS,115 Nexperia PSMN014-60LS - N-channel DFN3333-8 60 V 14 mΩ standard level MOSFET DFN 8-Pin Download
PSMN014-60LS parameters:

Description

Power Field-Effect Transistor

Parametric
Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionQFN3333, 8 PIN
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)42 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.014 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-N5
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)180 A
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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