Part Number |
NTF3055L108T3LFG |
NTF3055L108T3 |
NTF3055L108T3G |
NTF3055L108T3LF |
Description |
MOSFET 60V 3A N-Channel |
MOSFET 60V 3A N-Channel |
MOSFET 60V 3A N-Channel |
MOSFET 60V 3A N-Channel |
Parts packaging code |
TO-261AA |
TO-261AA |
TO-261AA |
TO-261AA |
package instruction |
ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN |
CASE 318E-04, TO-261, 4 PIN |
ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN |
CASE 318E-04, TO-261, 4 PIN |
Contacts |
4 |
4 |
4 |
4 |
Manufacturer packaging code |
CASE 318E-04 |
CASE 318E-04 |
0.0318 |
CASE 318E-04 |
Reach Compliance Code |
unknown |
not_compliant |
not_compliant |
not_compliant |
ECCN code |
EAR99 |
EAR99 |
EAR99 |
EAR99 |
Avalanche Energy Efficiency Rating (Eas) |
74 mJ |
74 mJ |
74 mJ |
74 mJ |
Shell connection |
DRAIN |
DRAIN |
DRAIN |
DRAIN |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
60 V |
60 V |
60 V |
60 V |
Maximum drain current (Abs) (ID) |
3 A |
3 A |
3 A |
3 A |
Maximum drain current (ID) |
3 A |
3 A |
3 A |
3 A |
Maximum drain-source on-resistance |
0.12 Ω |
0.12 Ω |
0.12 Ω |
0.12 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code |
TO-261AA |
TO-261AA |
TO-261AA |
TO-261AA |
JESD-30 code |
R-PDSO-G4 |
R-PDSO-G4 |
R-PDSO-G4 |
R-PDSO-G4 |
JESD-609 code |
e3 |
e0 |
e3 |
e0 |
Humidity sensitivity level |
3 |
3 |
1 |
3 |
Number of components |
1 |
1 |
1 |
1 |
Number of terminals |
4 |
4 |
4 |
4 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Maximum operating temperature |
175 °C |
175 °C |
175 °C |
175 °C |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
Package form |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
Peak Reflow Temperature (Celsius) |
260 |
NOT SPECIFIED |
260 |
240 |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
Maximum power dissipation(Abs) |
2.1 W |
2.1 W |
2.1 W |
2.1 W |
Maximum pulsed drain current (IDM) |
9 A |
9 A |
9 A |
9 A |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
surface mount |
YES |
YES |
YES |
YES |
Terminal surface |
Tin (Sn) |
Tin/Lead (Sn80Pb20) |
Tin (Sn) |
Tin/Lead (Sn/Pb) |
Terminal form |
GULL WING |
GULL WING |
GULL WING |
GULL WING |
Terminal location |
DUAL |
DUAL |
DUAL |
DUAL |
Maximum time at peak reflow temperature |
40 |
NOT SPECIFIED |
40 |
30 |
transistor applications |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |
SILICON |
SILICON |
Base Number Matches |
1 |
1 |
1 |
1 |
Is it Rohs certified? |
conform to |
incompatible |
- |
incompatible |