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NTF3055L108T3

Showing 4 Results for NTF3055L108T3, including NTF3055L108T3,NTF3055L108T3G, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
NTF3055L108T3 ON Semiconductor MOSFET 60V 3A N-Channel Download
NTF3055L108T3G ON Semiconductor MOSFET 60V 3A N-Channel Download
NTF3055L108T3LF ON Semiconductor MOSFET 60V 3A N-Channel Download
NTF3055L108T3LFG ON Semiconductor MOSFET 60V 3A N-Channel Download
NTF3055L108T3 Related Product Datasheets:
Part Number Datasheet
NTF3055L108T3 、 NTF3055L108T3G 、 NTF3055L108T3LF 、 NTF3055L108T3LFG Download Datasheet
NTF3055L108T3 Related Products:
Part Number NTF3055L108T3LFG NTF3055L108T3 NTF3055L108T3G NTF3055L108T3LF
Description MOSFET 60V 3A N-Channel MOSFET 60V 3A N-Channel MOSFET 60V 3A N-Channel MOSFET 60V 3A N-Channel
Parts packaging code TO-261AA TO-261AA TO-261AA TO-261AA
package instruction ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN CASE 318E-04, TO-261, 4 PIN ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN CASE 318E-04, TO-261, 4 PIN
Contacts 4 4 4 4
Manufacturer packaging code CASE 318E-04 CASE 318E-04 0.0318 CASE 318E-04
Reach Compliance Code unknown not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 74 mJ 74 mJ 74 mJ 74 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 3 A 3 A 3 A 3 A
Maximum drain current (ID) 3 A 3 A 3 A 3 A
Maximum drain-source on-resistance 0.12 Ω 0.12 Ω 0.12 Ω 0.12 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-261AA TO-261AA TO-261AA TO-261AA
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e0 e3 e0
Humidity sensitivity level 3 3 1 3
Number of components 1 1 1 1
Number of terminals 4 4 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED 260 240
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 2.1 W 2.1 W 2.1 W 2.1 W
Maximum pulsed drain current (IDM) 9 A 9 A 9 A 9 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface Tin (Sn) Tin/Lead (Sn80Pb20) Tin (Sn) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 NOT SPECIFIED 40 30
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
Is it Rohs certified? conform to incompatible - incompatible

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