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MTB23P06V

Showing 4 Results for MTB23P06V, including MTB23P06V,MTB23P06V, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
MTB23P06V Motorola ( NXP ) TMOS POWER FET 23 AMPERES 60 VOLTS Download
MTB23P06V ON Semiconductor P−Channel Power MOSFET Download
MTB23P06VT4 ON Semiconductor P−Channel Power MOSFET Download
MTB23P06VT4 Motorola ( NXP ) 23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET Download
MTB23P06V Related Product Datasheets:
Part Number Datasheet
MTB23P06V 、 MTB23P06VT4 Download Datasheet
MTB23P06VT4 Download Datasheet
MTB23P06V Download Datasheet
MTB23P06V Related Products:
Part Number MTB23P06V MTB23P06VT4
Description P−Channel Power MOSFET P−Channel Power MOSFET
Is it Rohs certified? incompatible incompatible
Maker ON Semiconductor ON Semiconductor
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Manufacturer packaging code CASE 418B-03 CASE 418B-03
Reach Compliance Code _compli _compli
ECCN code EAR99 EAR99
Other features AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 794 mJ 794 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (Abs) (ID) 23 A 23 A
Maximum drain current (ID) 23 A 23 A
Maximum drain-source on-resistance 0.12 Ω 0.12 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e0
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 235 NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 90 W 90 W
Maximum pulsed drain current (IDM) 81 A 81 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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