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MJD112TF

Among 3 related components, MJD112TF have related pdf.
Part Number Manufacturer Description Datasheet
MJD112TF Fairchild Darlington Transistors NPN Si Transistor Darlington Download
MJD112TF ON Semiconductor TRANS NPN DARL 100V 2A DPAK Download
MJD112TF Rochester Electronics 2A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 Download
MJD112TF parameters:

Description

2A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3

Parametric
Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeTO-252
package instructionDPAK-3
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)2 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusCOMMERCIAL
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Nominal transition frequency (fT)25 MHz

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