Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
MJD112TF | Fairchild | Darlington Transistors NPN Si Transistor Darlington | Download |
MJD112TF | ON Semiconductor | TRANS NPN DARL 100V 2A DPAK | Download |
MJD112TF | Rochester Electronics | 2A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 | Download |
2A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | Rochester Electronics |
Parts packaging code | TO-252 |
package instruction | DPAK-3 |
Contacts | 3 |
Reach Compliance Code | unknown |
Maximum collector current (IC) | 2 A |
Collector-emitter maximum voltage | 100 V |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
Minimum DC current gain (hFE) | 200 |
JEDEC-95 code | TO-252 |
JESD-30 code | R-PSSO-G2 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 2 |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | NPN |
Certification status | COMMERCIAL |
surface mount | YES |
Terminal surface | MATTE TIN |
Terminal form | GULL WING |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | 30 |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 25 MHz |