Part Number |
Manufacturer |
Description |
Datasheet |
IXTQ200N06P |
IXYS ( Littelfuse ) |
MOSFET 200 Amps 60V 0.006 Ohm Rds |
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|
IXTQ200N06P |
ISC |
isc N-Channel MOSFET Transistor |
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|
IXTQ200N06P |
IXYS |
Power Field-Effect Transistor, 200A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN |
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|
IXTQ200N075T |
ISC |
isc N-Channel MOSFET Transistor |
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|
IXTQ200N075T |
IXYS ( Littelfuse ) |
Preliminary Technical Information Trench Gate Power MOSFET |
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|
IXTQ200N075T |
IXYS |
MOSFET 200 Amps 75V 4.4 Rds |
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|
IXTQ200N085T |
ISC |
isc N-Channel MOSFET Transistor |
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|
IXTQ200N085T |
IXYS ( Littelfuse ) |
TrenchMV Power MOSFET |
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|
IXTQ200N085T |
IXYS |
MOSFET 200 Amps 85V 5.0 Rds |
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|
IXTQ200N10T |
ISC |
isc N-Channel MOSFET Transistor |
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|
IXTQ200N10T |
IXYS |
MOSFET 200 Amps 100V 5.4 Rds |
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|
IXTQ200N10T |
IXYS ( Littelfuse ) |
Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 200A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 5.5mΩ @ 50A, 10V Maximum power Dissipation (Ta=25°C): 550W(Tc) Type: N-channel |
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|
IXTQ200N10T |
Littelfuse |
Power Field-Effect Transistor, |
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|