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IXTP2R4N120P

Among 3 related components, IXTP2R4N120P have related pdf.
Part Number Manufacturer Description Datasheet
IXTP2R4N120P IXYS ( Littelfuse ) 2.4 A, 1200 V, 7.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Download
IXTP2R4N120P IXYS MOSFET 2.4 Amps 1200V 7.5 Rds Download
IXTP2R4N120P Littelfuse Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Download
IXTP2R4N120P parameters:

Description

Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Parametric
Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionTO-220, 3 PIN
Reach Compliance Codecompliant
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)200 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1200 V
Maximum drain current (Abs) (ID)2.4 A
Maximum drain current (ID)2.4 A
Maximum drain-source on-resistance7.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)6 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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