Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IXTP2R4N120P | IXYS ( Littelfuse ) | 2.4 A, 1200 V, 7.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Download |
IXTP2R4N120P | IXYS | MOSFET 2.4 Amps 1200V 7.5 Rds | Download |
IXTP2R4N120P | Littelfuse | Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Download |
Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
package instruction | TO-220, 3 PIN |
Reach Compliance Code | compliant |
Other features | AVALANCHE RATED |
Avalanche Energy Efficiency Rating (Eas) | 200 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 1200 V |
Maximum drain current (Abs) (ID) | 2.4 A |
Maximum drain current (ID) | 2.4 A |
Maximum drain-source on-resistance | 7.5 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 125 W |
Maximum pulsed drain current (IDM) | 6 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Matte Tin (Sn) |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |