Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IXBH9N160 | IXYS | Insulated Gate Bipolar Transistor, 9A I(C), 1600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | Download |
IXBH9N160 | Littelfuse | Insulated Gate Bipolar Transistor, 9A I(C), 1600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | Download |
IXBH9N160G | IXYS ( Littelfuse ) | Development Boards u0026 Kits - x86 | Download |
IXBH9N160G | IXYS | Insulated Gate Bipolar Transistor, 9A I(C), 1600V V(BR)CES, N-Channel, TO-247AD, | Download |
IXBH9N160G | Littelfuse | Insulated Gate Bipolar Transistor, | Download |
Insulated Gate Bipolar Transistor, 9A I(C), 1600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Littelfuse |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | compliant |
Other features | FAST |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 9 A |
Collector-emitter maximum voltage | 1600 V |
Configuration | SINGLE WITH BUILT-IN DIODE |
Gate emitter threshold voltage maximum | 8 V |
Gate-emitter maximum voltage | 20 V |
JEDEC-95 code | TO-247AD |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -55 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 100 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | POWER CONTROL |
Transistor component materials | SILICON |
Nominal off time (toff) | 220 ns |
Nominal on time (ton) | 260 ns |