Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
package instruction | LEAD FREE, TO-262, 3 PIN |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Factory Lead Time | 15 weeks |
Avalanche Energy Efficiency Rating (Eas) | 170 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 75 V |
Maximum drain current (Abs) (ID) | 170 A |
Maximum drain current (ID) | 120 A |
Maximum drain-source on-resistance | 0.0041 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-262AA |
JESD-30 code | R-PSIP-T3 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 175 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 300 W |
Maximum pulsed drain current (IDM) | 670 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrier |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |