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IRFP448PBF

Among 3 related components, IRFP448PBF have related pdf.
Part Number Manufacturer Description Datasheet
IRFP448PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN Download
IRFP448PBF Vishay MOSFET N-Chan 500V 11 Amp Download
IRFP448PBF International Rectifier(Infineon) Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 11A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 600mΩ @ 6.6A, 10V Maximum power dissipation (Ta =25°C): 180W Type: N channel N channel, 500V, 11A, 600mΩ@10V Download
IRFP448PBF parameters:

Description

漏源电压(Vdss):500V 连续漏极电流(Id)(25°C 时):11A 栅源极阈值电压:4V @ 250uA 漏源导通电阻:600mΩ @ 6.6A,10V 最大功率耗散(Ta=25°C):180W 类型:N沟道 N沟道,500V,11A,600mΩ@10V

Parametric
Parameter NameAttribute value
Drain-source voltage (Vdss)500V
Continuous drain current (Id) at 25°C11A
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance600mΩ @ 6.6A,10V
Maximum power dissipation (Ta=25°C)180W
typeN channel

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