Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IRFP448PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN | Download |
IRFP448PBF | Vishay | MOSFET N-Chan 500V 11 Amp | Download |
IRFP448PBF | International Rectifier(Infineon) | Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 11A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 600mΩ @ 6.6A, 10V Maximum power dissipation (Ta =25°C): 180W Type: N channel N channel, 500V, 11A, 600mΩ@10V | Download |
漏源电压(Vdss):500V 连续漏极电流(Id)(25°C 时):11A 栅源极阈值电压:4V @ 250uA 漏源导通电阻:600mΩ @ 6.6A,10V 最大功率耗散(Ta=25°C):180W 类型:N沟道 N沟道,500V,11A,600mΩ@10V
Parameter Name | Attribute value |
Drain-source voltage (Vdss) | 500V |
Continuous drain current (Id) at 25°C | 11A |
Gate-source threshold voltage | 4V @ 250uA |
Drain-source on-resistance | 600mΩ @ 6.6A,10V |
Maximum power dissipation (Ta=25°C) | 180W |
type | N channel |