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IRFL9110

Showing 13 Results for IRFL9110, including IRFL9110,IRFL9110, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
IRFL9110 International Rectifier ( Infineon ) POWER, FET Download
IRFL9110 Vishay MOSFET P-Chan 100V 1.1 Amp Download
IRFL9110_17 Vishay Power MOSFET Download
IRFL9110PBF International Rectifier ( Infineon ) 1100 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA Download
IRFL9110PBF Vishay MOSFET P-Chan 100V 1.1 Amp Download
IRFL9110TR Vishay MOSFET P-Chan 100V 1.1 Amp Download
IRFL9110TR International Rectifier ( Infineon ) Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Download
IRFL9110TRPBF Vishay RS-232 Interface IC 15kV ESD-Protected 5V RS232 Transceiver Download
IRFL9110TRPBF VBsemi Electronics Co. Ltd. P-Channel 100-V (D-S) MOSFET Download
IRFL9110TRPBF International Rectifier ( Infineon ) Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Download
IRFL9110TRPBFA Vishay Power MOSFET Download
IRFL9110TRPBF-BE3AB Vishay Power MOSFET Download
IRFL9110_V01 Vishay Power MOSFET Download
IRFL9110 Related Product Datasheets:
Part Number Datasheet
IRFL9110PBF 、 IRFL9110TR Download Datasheet
IRFL9110TRPBF Download Datasheet
IRFL9110TRPBF Download Datasheet
IRFL9110TR Download Datasheet
IRFL9110PBF Download Datasheet
IRFL9110 Download Datasheet
IRFL9110 Download Datasheet
IRFL9110 Related Products:
Part Number IRFL9110PBF IRFL9110TR
Description MOSFET P-Chan 100V 1.1 Amp MOSFET P-Chan 100V 1.1 Amp
Is it lead-free? Lead free Contains lead
Is it Rohs certified? conform to incompatible
Maker Vishay Vishay
Parts packaging code TO-261AA TO-261AA
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V
Maximum drain current (ID) 1.1 A 1.1 A
Maximum drain-source on-resistance 1.2 Ω 1.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-261AA TO-261AA
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e4 e0
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 240
Polarity/channel type P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Silver (Ag) TIN LEAD
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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