Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IRFL9110 | International Rectifier ( Infineon ) | POWER, FET | Download |
IRFL9110 | Vishay | MOSFET P-Chan 100V 1.1 Amp | Download |
IRFL9110_17 | Vishay | Power MOSFET | Download |
IRFL9110PBF | International Rectifier ( Infineon ) | 1100 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA | Download |
IRFL9110PBF | Vishay | MOSFET P-Chan 100V 1.1 Amp | Download |
IRFL9110TR | Vishay | MOSFET P-Chan 100V 1.1 Amp | Download |
IRFL9110TR | International Rectifier ( Infineon ) | Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | Download |
IRFL9110TRPBF | Vishay | RS-232 Interface IC 15kV ESD-Protected 5V RS232 Transceiver | Download |
IRFL9110TRPBF | VBsemi Electronics Co. Ltd. | P-Channel 100-V (D-S) MOSFET | Download |
IRFL9110TRPBF | International Rectifier ( Infineon ) | Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | Download |
IRFL9110TRPBFA | Vishay | Power MOSFET | Download |
IRFL9110TRPBF-BE3AB | Vishay | Power MOSFET | Download |
IRFL9110_V01 | Vishay | Power MOSFET | Download |
Part Number | Datasheet |
---|---|
IRFL9110PBF 、 IRFL9110TR | Download Datasheet |
IRFL9110TRPBF | Download Datasheet |
IRFL9110TRPBF | Download Datasheet |
IRFL9110TR | Download Datasheet |
IRFL9110PBF | Download Datasheet |
IRFL9110 | Download Datasheet |
IRFL9110 | Download Datasheet |
Part Number | IRFL9110PBF | IRFL9110TR |
---|---|---|
Description | MOSFET P-Chan 100V 1.1 Amp | MOSFET P-Chan 100V 1.1 Amp |
Is it lead-free? | Lead free | Contains lead |
Is it Rohs certified? | conform to | incompatible |
Maker | Vishay | Vishay |
Parts packaging code | TO-261AA | TO-261AA |
package instruction | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
Contacts | 4 | 4 |
Reach Compliance Code | compliant | compliant |
ECCN code | EAR99 | EAR99 |
Shell connection | DRAIN | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 100 V | 100 V |
Maximum drain current (ID) | 1.1 A | 1.1 A |
Maximum drain-source on-resistance | 1.2 Ω | 1.2 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-261AA | TO-261AA |
JESD-30 code | R-PDSO-G4 | R-PDSO-G4 |
JESD-609 code | e4 | e0 |
Number of components | 1 | 1 |
Number of terminals | 4 | 4 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 | 240 |
Polarity/channel type | P-CHANNEL | P-CHANNEL |
Certification status | Not Qualified | Not Qualified |
surface mount | YES | YES |
Terminal surface | Silver (Ag) | TIN LEAD |
Terminal form | GULL WING | GULL WING |
Terminal location | DUAL | DUAL |
Maximum time at peak reflow temperature | 40 | 30 |
transistor applications | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON |