Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IRFF212 | New Jersey Semiconductor | RELD EFFECT POWER TRANSISTOR | Download |
IRFF212 | Rochester Electronics | 1.8A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | Download |
IRFF212 | Renesas Electronics Corporation | 1.8A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | Download |
IRFF212 | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 1.8A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Download |
IRFF212 | Vishay | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Download |
IRFF212 | General Electric Solid State | Transistor | Download |
IRFF212 | Harris | Power Field-Effect Transistor, 1.8A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Download |
IRFF212R | Renesas Electronics Corporation | 1.8A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | Download |
IRFF212R | Harris | Power Field-Effect Transistor, 1.8A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Download |
IRFF212R | New Jersey Semiconductor | Trans MOSFET N-CH 200V 7.5A 3-Pin TO-39 | Download |
IRFF212R | Intersil ( Renesas ) | 1.8A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | Download |
Part Number | Datasheet |
---|---|
IRFF212R 、 IRFF212R | Download Datasheet |
IRFF212 | Download Datasheet |
IRFF212R | Download Datasheet |
IRFF212R | Download Datasheet |
IRFF212 | Download Datasheet |
IRFF212 | Download Datasheet |
IRFF212 | Download Datasheet |
IRFF212 | Download Datasheet |
IRFF212 | Download Datasheet |
IRFF212 | Download Datasheet |
Part Number | IRFF212R | IRFF212R |
---|---|---|
Description | 1.8A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 1.8A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
Is it Rohs certified? | incompatible | incompatible |
Maker | Intersil ( Renesas ) | Renesas Electronics Corporation |
Reach Compliance Code | not_compliant | not_compliant |
ECCN code | EAR99 | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 30 mJ | 30 mJ |
Shell connection | DRAIN | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 200 V | 200 V |
Maximum drain current (Abs) (ID) | 1.8 A | 1.8 A |
Maximum drain current (ID) | 1.8 A | 1.8 A |
Maximum drain-source on-resistance | 2.4 Ω | 2.4 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-205AF | TO-205AF |
JESD-30 code | O-MBCY-W3 | O-MBCY-W3 |
JESD-609 code | e0 | e0 |
Number of components | 1 | 1 |
Number of terminals | 3 | 3 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C | 150 °C |
Package body material | METAL | METAL |
Package shape | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL | N-CHANNEL |
Maximum power consumption environment | 15 W | 15 W |
Maximum power dissipation(Abs) | 15 W | 15 W |
Maximum pulsed drain current (IDM) | 7.5 A | 7.5 A |
Certification status | Not Qualified | Not Qualified |
surface mount | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | WIRE | WIRE |
Terminal location | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
transistor applications | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON |
Maximum off time (toff) | 30 ns | 30 ns |
Maximum opening time (tons) | 40 ns | 40 ns |