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IRFF212

Showing 11 Results for IRFF212, including IRFF212,IRFF212, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
IRFF212 New Jersey Semiconductor RELD EFFECT POWER TRANSISTOR Download
IRFF212 Rochester Electronics 1.8A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Download
IRFF212 Renesas Electronics Corporation 1.8A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Download
IRFF212 International Rectifier ( Infineon ) Power Field-Effect Transistor, 1.8A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Download
IRFF212 Vishay Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Download
IRFF212 General Electric Solid State Transistor Download
IRFF212 Harris Power Field-Effect Transistor, 1.8A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Download
IRFF212R Renesas Electronics Corporation 1.8A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Download
IRFF212R Harris Power Field-Effect Transistor, 1.8A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Download
IRFF212R New Jersey Semiconductor Trans MOSFET N-CH 200V 7.5A 3-Pin TO-39 Download
IRFF212R Intersil ( Renesas ) 1.8A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Download
IRFF212 Related Product Datasheets:
Part Number Datasheet
IRFF212R 、 IRFF212R Download Datasheet
IRFF212 Download Datasheet
IRFF212R Download Datasheet
IRFF212R Download Datasheet
IRFF212 Download Datasheet
IRFF212 Download Datasheet
IRFF212 Download Datasheet
IRFF212 Download Datasheet
IRFF212 Download Datasheet
IRFF212 Download Datasheet
IRFF212 Related Products:
Part Number IRFF212R IRFF212R
Description 1.8A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 1.8A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Is it Rohs certified? incompatible incompatible
Maker Intersil ( Renesas ) Renesas Electronics Corporation
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 30 mJ 30 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V
Maximum drain current (Abs) (ID) 1.8 A 1.8 A
Maximum drain current (ID) 1.8 A 1.8 A
Maximum drain-source on-resistance 2.4 Ω 2.4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-205AF TO-205AF
JESD-30 code O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power consumption environment 15 W 15 W
Maximum power dissipation(Abs) 15 W 15 W
Maximum pulsed drain current (IDM) 7.5 A 7.5 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum off time (toff) 30 ns 30 ns
Maximum opening time (tons) 40 ns 40 ns

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