Part Number |
Manufacturer |
Description |
Datasheet |
IRFB4229 |
Infineon |
—— |
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|
IRFB4229 |
ISC |
N-Channel MOSFET Transistor |
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|
IRFB4229PBF |
International Rectifier ( Infineon ) |
46 A, 250 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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|
IRFB4229PBF |
Infineon |
Thick Film Resistors - SMD 2watts 1% .1ohms 100 PPM 2512 |
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|
IRFB4229PBF |
International Rectifier(Infineon) |
Drain-source voltage (Vdss): 250V Continuous drain current (Id) (at 25°C): 46A Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 46mΩ @ 26A, 10V Maximum power dissipation (Ta= 25°C): 330W Type: N-channel N-channel, 250V, 46A, 38mΩ@10V |
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|
IRFB4229PBF_15 |
International Rectifier ( Infineon ) |
Advanced Process Technology |
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