Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Infineon(Infineon) |
package instruction | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Factory Lead Time | 15 weeks |
Samacsys Description | MOSFET MOSFT 100V 5.4A 39mOhm 37nC |
Avalanche Energy Efficiency Rating (Eas) | 91 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain current (ID) | 5.4 A |
Maximum drain-source on-resistance | 0.039 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | MS-012AA |
JESD-30 code | R-PDSO-G8 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 8 |
Operating mode | ENHANCEMENT MODE |
Minimum operating temperature | -55 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 43 A |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |