Part Number |
Manufacturer |
Description |
Datasheet |
IRF7456 |
International Rectifier ( Infineon ) |
Power MOSFET(Vdss=20V, Rds(on)max=0.0065ohm, Id=16A) |
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|
IRF7456PBF |
International Rectifier ( Infineon ) |
SMPS MOSFET |
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|
IRF7456PBF |
Infineon |
MOSFET 20V DUAL N-CH HEXFET 6.5mOhms 41nC |
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|
IRF7456PBF-1 |
International Rectifier ( Infineon ) |
Industry-standard pinout SO-8 Package |
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|
IRF7456PBF-1 |
Infineon |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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|
IRF7456PBF-1_15 |
International Rectifier ( Infineon ) |
Industry-standard pinout SO-8 Package |
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|
IRF7456PBF_15 |
International Rectifier ( Infineon ) |
High Frequency DC-DC Converters with Synchronous Rectification |
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|
IRF7456TR |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 |
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|
IRF7456TR |
Infineon |
Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 |
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|
IRF7456TRPBF |
International Rectifier ( Infineon ) |
16 A, 20 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
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|
IRF7456TRPBF |
Infineon |
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 16A Gate-source threshold voltage: 2V @ 250uA Drain-source on-resistance: 6.5mΩ @ 16A, 10V Maximum power dissipation (Ta =25°C): 2.5W Type: N-channel N-channel, 20V, 16A, 6.5mΩ@10V |
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|
IRF7456TRPBF-1 |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor |
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|