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IRF7451

Showing 8 Results for IRF7451, including IRF7451,IRF7451, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
IRF7451 International Rectifier ( Infineon ) Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A) Download
IRF7451 Infineon MOSFET N-CH 150V 3.6A 8-SOIC Download
IRF7451PBF International Rectifier ( Infineon ) SMPS MOSFET Download
IRF7451PBF_15 International Rectifier ( Infineon ) High frequency DC-DC converters Download
IRF7451TR International Rectifier ( Infineon ) mosfet N-CH 150v 3.6A 8-soic Download
IRF7451TR Infineon MOSFET N-CH 150V 3.6A 8-SOIC Download
IRF7451TRPBF International Rectifier ( Infineon ) 3.6 A, 150 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Download
IRF7451TRPBF Infineon MOSFET MOSFT 150V 3.6A 90mOhm 28nC Download
IRF7451 Related Product Datasheets:
Part Number Datasheet
IRF7451 、 IRF7451TR 、 IRF7451TR Download Datasheet
IRF7451TRPBF Download Datasheet
IRF7451TRPBF Download Datasheet
IRF7451PBF_15 Download Datasheet
IRF7451PBF Download Datasheet
IRF7451 Download Datasheet
IRF7451PBF Download Datasheet
IRF7451 Related Products:
Part Number IRF7451 IRF7451TR IRF7451TR
Description MOSFET N-CH 150V 3.6A 8-SOIC MOSFET N-CH 150V 3.6A 8-SOIC mosfet N-CH 150v 3.6A 8-soic
Is it Rohs certified? incompatible incompatible incompatible
Maker Infineon Infineon International Rectifier ( Infineon )
package instruction SO-8 SO-8 SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown compliant unknown
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 210 mJ 210 mJ 210 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 150 V 150 V 150 V
Maximum drain current (ID) 3.6 A 3.6 A 3.6 A
Maximum drain-source on-resistance 0.09 Ω 0.09 Ω 0.09 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code MS-012AA MS-012AA MS-012AA
JESD-30 code R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
JESD-609 code e0 e3 e0
Number of components 1 1 1
Number of terminals 8 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 245 NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 28 A 28 A 28 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface TIN LEAD Matte Tin (Sn) TIN LEAD
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Humidity sensitivity level 1 2 -
Base Number Matches - 1 1

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