Parameter Name | Attribute value |
Product Attribute | Attribute Value |
Manufacturer | Infineon(Infineon) |
Product Category | MOSFET |
RoHS | Details |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | SO-8 |
Number of Channels | 2 Channel |
Transistor Polarity | N-Channel, P-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 2.1 A |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 19 nC, 21 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Dual Dual Drain |
Pd - Power Dissipation | 2 W |
Channel Mode | Enhancement |
Packaging | Tube |
Height | 1.75 mm |
Length | 4.9 mm |
Transistor Type | 1 N-Channel, 1 P-Channel |
Type | Power MOSFET |
Width | 3.9 mm |
Forward Transconductance - Min | 2.4 S, 1.1 S |
Fall Time | 20 ns, 40 ns |
Rise Time | 11 ns, 13 ns |
Factory Pack Quantity | 4085 |
Typical Turn-Off Delay Time | 35 ns, 30 ns |
Typical Turn-On Delay Time | 6.7 ns, 25 ns |
Unit Weight | 0.019048 oz |