Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IRF730S | International Rectifier ( Infineon ) | HEXFET POWER MOSFET | Download |
IRF730S | KEXIN | N-Channel MOSFET | Download |
IRF730S | Vishay | MOSFET N-Chan 400V 5.5 Amp | Download |
IRF730S | New Jersey Semiconductor | Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-263AB | Download |
IRF730S | Motorola ( NXP ) | 4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Download |
IRF730SPBF | International Rectifier ( Infineon ) | 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET | Download |
IRF730SPBF | Vishay | MOSFET N-Chan 400V 5.5 Amp | Download |
IRF730STRL | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Download |
IRF730STRL | Vishay | MOSFET N-CH 400V 5.5A D2PAK | Download |
IRF730STRLPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | Download |
IRF730STRLPBF | Vishay | MOSFET N-Chan 400V 5.5 Amp | Download |
IRF730STRR | Vishay | MOSFET N-CH 400V 5.5A D2PAK | Download |
IRF730STRR | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Download |
IRF730STRRPBF | Vishay | MOSFET N-Chan 400V 5.5 Amp | Download |
IRF730STRRPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | Download |
IRF730S_V01 | Vishay | Power MOSFET | Download |
Part Number | Datasheet |
---|---|
IRF730STRL 、 IRF730STRR | Download Datasheet |
IRF730STRL 、 IRF730STRR | Download Datasheet |
IRF730S 、 IRF730STRRPBF | Download Datasheet |
IRF730STRLPBF 、 IRF730STRRPBF | Download Datasheet |
IRF730SPBF | Download Datasheet |
IRF730STRLPBF | Download Datasheet |
IRF730SPBF | Download Datasheet |
IRF730S | Download Datasheet |
IRF730S | Download Datasheet |
IRF730S | Download Datasheet |
Part Number | IRF730STRLPBF | IRF730STRRPBF |
---|---|---|
Description | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 |
Is it lead-free? | Lead free | Lead free |
Is it Rohs certified? | conform to | conform to |
package instruction | SMALL OUTLINE, R-PSSO-G2 | LEAD FREE, PLASTIC, SMD-220, D2PAK-3 |
Contacts | 3 | 3 |
Reach Compliance Code | compliant | not_compliant |
Other features | AVALANCHE RATED | AVALANCHE RATED |
Avalanche Energy Efficiency Rating (Eas) | 290 mJ | 290 mJ |
Shell connection | DRAIN | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 400 V | 400 V |
Maximum drain current (ID) | 5.5 A | 5.5 A |
Maximum drain-source on-resistance | 1 Ω | 1 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSSO-G2 | R-PSSO-G2 |
JESD-609 code | e3 | e3 |
Humidity sensitivity level | 1 | 1 |
Number of components | 1 | 1 |
Number of terminals | 2 | 2 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 | 260 |
Polarity/channel type | N-CHANNEL | N-CHANNEL |
Maximum pulsed drain current (IDM) | 22 A | 22 A |
Certification status | Not Qualified | Not Qualified |
surface mount | YES | YES |
Terminal surface | MATTE TIN OVER NICKEL | Matte Tin (Sn) - with Nickel (Ni) barrier |
Terminal form | GULL WING | GULL WING |
Terminal location | SINGLE | SINGLE |
Maximum time at peak reflow temperature | 30 | 30 |
transistor applications | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON |
Base Number Matches | 1 | 1 |