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IRF730S

Showing 16 Results for IRF730S, including IRF730S,IRF730S, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
IRF730S International Rectifier ( Infineon ) HEXFET POWER MOSFET Download
IRF730S KEXIN N-Channel MOSFET Download
IRF730S Vishay MOSFET N-Chan 400V 5.5 Amp Download
IRF730S New Jersey Semiconductor Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-263AB Download
IRF730S Motorola ( NXP ) 4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Download
IRF730SPBF International Rectifier ( Infineon ) 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET Download
IRF730SPBF Vishay MOSFET N-Chan 400V 5.5 Amp Download
IRF730STRL International Rectifier ( Infineon ) Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Download
IRF730STRL Vishay MOSFET N-CH 400V 5.5A D2PAK Download
IRF730STRLPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 Download
IRF730STRLPBF Vishay MOSFET N-Chan 400V 5.5 Amp Download
IRF730STRR Vishay MOSFET N-CH 400V 5.5A D2PAK Download
IRF730STRR International Rectifier ( Infineon ) Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Download
IRF730STRRPBF Vishay MOSFET N-Chan 400V 5.5 Amp Download
IRF730STRRPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 Download
IRF730S_V01 Vishay Power MOSFET Download
IRF730S Related Product Datasheets:
Part Number Datasheet
IRF730STRL 、 IRF730STRR Download Datasheet
IRF730STRL 、 IRF730STRR Download Datasheet
IRF730S 、 IRF730STRRPBF Download Datasheet
IRF730STRLPBF 、 IRF730STRRPBF Download Datasheet
IRF730SPBF Download Datasheet
IRF730STRLPBF Download Datasheet
IRF730SPBF Download Datasheet
IRF730S Download Datasheet
IRF730S Download Datasheet
IRF730S Download Datasheet
IRF730S Related Products:
Part Number IRF730STRLPBF IRF730STRRPBF
Description Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
package instruction SMALL OUTLINE, R-PSSO-G2 LEAD FREE, PLASTIC, SMD-220, D2PAK-3
Contacts 3 3
Reach Compliance Code compliant not_compliant
Other features AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 290 mJ 290 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 400 V
Maximum drain current (ID) 5.5 A 5.5 A
Maximum drain-source on-resistance 1 Ω 1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 22 A 22 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface MATTE TIN OVER NICKEL Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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