Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IRF2805 | International Rectifier ( Infineon ) | AUTOMOTIVE MOSFET | Download |
IRF2805 | Kersemi Electronic | Climate Control, ABS, Electronic Braking,Windshield Wipers | Download |
IRF2805L | International Rectifier ( Infineon ) | AUTOMOTIVE MOSFET | Download |
IRF2805LPbF | International Rectifier ( Infineon ) | HEXFET Power MOSFET | Download |
IRF2805LPBF | Infineon | MOSFET MOSFT 55V 135A 4.7mOhm 150nC | Download |
IRF2805PBF | International Rectifier ( Infineon ) | 75 A, 55 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Download |
IRF2805PBF | Infineon | MOSFET MOSFT 55V 175A 4.7mOhm 150nC | Download |
IRF2805PBF | International Rectifier(Infineon) | Drain-source voltage (Vdss): 55V Continuous drain current (Id) (at 25°C): 75A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 4.7mΩ @ 104A, 10V Maximum power dissipation (Ta =25°C): 330W Type: N-channel N-channel, 55V, 75A, 4.7mΩ@10V | Download |
IRF2805PBF_15 | International Rectifier ( Infineon ) | Advanced Process Technology | Download |
IRF2805S | International Rectifier ( Infineon ) | AUTOMOTIVE MOSFET | Download |
IRF2805S | ISC | isc N-Channel MOSFET Transistor | Download |
IRF2805SPBF | International Rectifier ( Infineon ) | HEXFET Power MOSFET | Download |
IRF2805SPBF | Infineon | MOSFET 55V 1 N-CH HEXFET 4.7mOhms 150nC | Download |
IRF2805SPBF_15 | International Rectifier ( Infineon ) | Advanced Process Technology | Download |
IRF2805STRL | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Download |
IRF2805STRLPBF | International Rectifier ( Infineon ) | Industrial Motor Drive | Download |
IRF2805STRLPBF | Infineon | Drain-source voltage (Vdss): 55V Continuous drain current (Id) (at 25°C): 135A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 4.7mΩ @ 104A, 10V Maximum power consumption Dispersion (Ta=25°C): 200W(Tc) Type: N-channel | Download |
IRF2805STRR | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Download |
IRF2805STRRPBF | International Rectifier ( Infineon ) | mosfet N-CH 55v 135a d2pak | Download |
Part Number | Datasheet |
---|---|
IRF2805STRLPBF 、 IRF2805STRRPBF | Download Datasheet |
IRF2805LPbF 、 IRF2805SPBF | Download Datasheet |
IRF2805L 、 IRF2805S | Download Datasheet |
IRF2805 、 IRF2805PBF | Download Datasheet |
IRF2805STRL 、 IRF2805STRR | Download Datasheet |
IRF2805SPBF_15 | Download Datasheet |
IRF2805STRLPBF | Download Datasheet |
IRF2805SPBF | Download Datasheet |
IRF2805PBF | Download Datasheet |
IRF2805LPBF | Download Datasheet |
Part Number | IRF2805STRL | IRF2805STRR |
---|---|---|
Description | Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 |
Is it Rohs certified? | incompatible | incompatible |
Maker | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
Parts packaging code | D2PAK | D2PAK |
package instruction | PLASTIC, D2PAK-3 | PLASTIC, D2PAK-3 |
Contacts | 3 | 3 |
Reach Compliance Code | unknown | compliant |
ECCN code | EAR99 | EAR99 |
Other features | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
Avalanche Energy Efficiency Rating (Eas) | 1220 mJ | 1220 mJ |
Shell connection | DRAIN | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 55 V | 55 V |
Maximum drain current (ID) | 75 A | 75 A |
Maximum drain-source on-resistance | 0.0047 Ω | 0.0047 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-263AB | TO-263AB |
JESD-30 code | R-PSSO-G2 | R-PSSO-G2 |
JESD-609 code | e0 | e0 |
Number of components | 1 | 1 |
Number of terminals | 2 | 2 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | 225 |
Polarity/channel type | N-CHANNEL | N-CHANNEL |
Maximum pulsed drain current (IDM) | 700 A | 700 A |
Certification status | Not Qualified | Not Qualified |
surface mount | YES | YES |
Terminal surface | TIN LEAD | TIN LEAD |
Terminal form | GULL WING | GULL WING |
Terminal location | SINGLE | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED | 30 |
transistor applications | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON |
Base Number Matches | 1 | 1 |