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IRF2805

Showing 19 Results for IRF2805, including IRF2805,IRF2805, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
IRF2805 International Rectifier ( Infineon ) AUTOMOTIVE MOSFET Download
IRF2805 Kersemi Electronic Climate Control, ABS, Electronic Braking,Windshield Wipers Download
IRF2805L International Rectifier ( Infineon ) AUTOMOTIVE MOSFET Download
IRF2805LPbF International Rectifier ( Infineon ) HEXFET Power MOSFET Download
IRF2805LPBF Infineon MOSFET MOSFT 55V 135A 4.7mOhm 150nC Download
IRF2805PBF International Rectifier ( Infineon ) 75 A, 55 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Download
IRF2805PBF Infineon MOSFET MOSFT 55V 175A 4.7mOhm 150nC Download
IRF2805PBF International Rectifier(Infineon) Drain-source voltage (Vdss): 55V Continuous drain current (Id) (at 25°C): 75A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 4.7mΩ @ 104A, 10V Maximum power dissipation (Ta =25°C): 330W Type: N-channel N-channel, 55V, 75A, 4.7mΩ@10V Download
IRF2805PBF_15 International Rectifier ( Infineon ) Advanced Process Technology Download
IRF2805S International Rectifier ( Infineon ) AUTOMOTIVE MOSFET Download
IRF2805S ISC isc N-Channel MOSFET Transistor Download
IRF2805SPBF International Rectifier ( Infineon ) HEXFET Power MOSFET Download
IRF2805SPBF Infineon MOSFET 55V 1 N-CH HEXFET 4.7mOhms 150nC Download
IRF2805SPBF_15 International Rectifier ( Infineon ) Advanced Process Technology Download
IRF2805STRL International Rectifier ( Infineon ) Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Download
IRF2805STRLPBF International Rectifier ( Infineon ) Industrial Motor Drive Download
IRF2805STRLPBF Infineon Drain-source voltage (Vdss): 55V Continuous drain current (Id) (at 25°C): 135A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 4.7mΩ @ 104A, 10V Maximum power consumption Dispersion (Ta=25°C): 200W(Tc) Type: N-channel Download
IRF2805STRR International Rectifier ( Infineon ) Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Download
IRF2805STRRPBF International Rectifier ( Infineon ) mosfet N-CH 55v 135a d2pak Download
IRF2805 Related Product Datasheets:
Part Number Datasheet
IRF2805STRLPBF 、 IRF2805STRRPBF Download Datasheet
IRF2805LPbF 、 IRF2805SPBF Download Datasheet
IRF2805L 、 IRF2805S Download Datasheet
IRF2805 、 IRF2805PBF Download Datasheet
IRF2805STRL 、 IRF2805STRR Download Datasheet
IRF2805SPBF_15 Download Datasheet
IRF2805STRLPBF Download Datasheet
IRF2805SPBF Download Datasheet
IRF2805PBF Download Datasheet
IRF2805LPBF Download Datasheet
IRF2805 Related Products:
Part Number IRF2805STRL IRF2805STRR
Description Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
Is it Rohs certified? incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code D2PAK D2PAK
package instruction PLASTIC, D2PAK-3 PLASTIC, D2PAK-3
Contacts 3 3
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99
Other features AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas) 1220 mJ 1220 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V
Maximum drain current (ID) 75 A 75 A
Maximum drain-source on-resistance 0.0047 Ω 0.0047 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 225
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 700 A 700 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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