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IPS80R1K2P7AKMA1

Among 1 related components, IPS80R1K2P7AKMA1 have related pdf.
Part Number Manufacturer Description Datasheet
IPS80R1K2P7AKMA1 Infineon MOSFET N-CH 800V 4.5A TO251-3 Download
IPS80R1K2P7AKMA1 parameters:

Description

MOSFET N-CH 800V 4.5A TO251-3

Parametric
Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)800V
Current - Continuous Drain (Id) at 25°C4.5A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs1.2 ohms @ 1.7A, 10V
Vgs (th) (maximum value) when different Id3.5V @ 80µA
Gate charge (Qg) at different Vgs (maximum value)11nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)300pF @ 500V
FET function-
Power dissipation (maximum)37W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingPG-TO251-3
Package/casingTO-251-3 stubbed lead, IPak

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