Parameter Name | Attribute value |
FET type | N channel |
technology | MOSFET (metal oxide) |
Drain-source voltage (Vdss) | 800V |
Current - Continuous Drain (Id) at 25°C | 4.5A(Tc) |
Drive voltage (maximum Rds On, minimum Rds On) | 10V |
Rds On (maximum value) when different Id, Vgs | 1.2 ohms @ 1.7A, 10V |
Vgs (th) (maximum value) when different Id | 3.5V @ 80µA |
Gate charge (Qg) at different Vgs (maximum value) | 11nC @ 10V |
Vgs (maximum value) | ±20V |
Input capacitance (Ciss) at different Vds (maximum value) | 300pF @ 500V |
FET function | - |
Power dissipation (maximum) | 37W(Tc) |
Operating temperature | -55°C ~ 150°C(TJ) |
Installation type | Through hole |
Supplier device packaging | PG-TO251-3 |
Package/casing | TO-251-3 stubbed lead, IPak |