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IPG20N06S2L65AATMA1

Among 1 related components, IPG20N06S2L65AATMA1 have related pdf.
Part Number Manufacturer Description Datasheet
IPG20N06S2L65AATMA1 Infineon MOSFET 2N-CH 8TDSON Download
IPG20N06S2L65AATMA1 parameters:

Description

MOSFET 2N-CH 8TDSON

Parametric
Parameter NameAttribute value
FET type2 N-channel (dual)
FET functionlogic level gate
Drain-source voltage (Vdss)55V
Current - Continuous Drain (Id) at 25°C20A
Rds On (maximum value) when different Id, Vgs65 milliohms @ 15A, 10V
Vgs (th) (maximum value) when different Id2V @ 14µA
Gate charge (Qg) at different Vgs (maximum value)12nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value)410pF @ 25V
Power - Max43W
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Package/casing8-PowerVDFN
Supplier device packagingPG-TDSON-8-10

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