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IPDD60R102G7XTMA1

Among 1 related components, IPDD60R102G7XTMA1 have related pdf.
Part Number Manufacturer Description Datasheet
IPDD60R102G7XTMA1 Infineon MOSFET HIGH POWER_NEW Download
IPDD60R102G7XTMA1 parameters:

Description

MOSFET HIGH POWER_NEW

Parametric
Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon(Infineon)
Product CategoryMOSFET
RoHSDetails
Mounting StyleSMD/SMT
Package / CasePG-HDSOP-10
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current23 A
Rds On - Drain-Source Resistance102 mOhms
Vgs th - Gate-Source Threshold Voltage3 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge34 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation139 W
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Fall Time4 ns
Rise Time5 ns
Factory Pack Quantity1700
Typical Turn-Off Delay Time60 ns
Typical Turn-On Delay Time18 ns

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