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IPD90R1K2C

Showing 5 Results for IPD90R1K2C, including IPD90R1K2C3,IPD90R1K2C3AT, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
IPD90R1K2C3 Infineon Drain-source voltage (Vdss): 900V Continuous drain current (Id) (at 25°C): 5.1A (Tc) Gate-source threshold voltage: 3.5V @ 310uA Drain-source on-resistance: 1.2Ω @ 2.8A, 10V Maximum power dissipation (Ta=25°C): 83W (Tc) Type: N-channel N-channel, 900V, 5.1A Download
IPD90R1K2C3AT Infineon Power Field-Effect Transistor Download
IPD90R1K2C3ATMA1 Infineon MOSFET N-Ch 900V 5.1A DPAK-2 Download
IPD90R1K2C3BT Infineon Power Field-Effect Transistor Download
IPD90R1K2C3BTMA1 Infineon MOSFET N-Ch 900V 5.1A DPAK-2 CoolMOS C3 Download
IPD90R1K2C Related Product Datasheets:
Part Number Datasheet
IPD90R1K2C3ATMA1 、 IPD90R1K2C3BTMA1 Download Datasheet
IPD90R1K2C3AT 、 IPD90R1K2C3BT Download Datasheet
IPD90R1K2C3 Download Datasheet
IPD90R1K2C Related Products:
Part Number IPD90R1K2C3AT IPD90R1K2C3BT
Description Power Field-Effect Transistor Power Field-Effect Transistor
Maker Infineon Infineon
package instruction , ,
Reach Compliance Code compliant compliant

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