Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IPD90R1K2C3 | Infineon | Drain-source voltage (Vdss): 900V Continuous drain current (Id) (at 25°C): 5.1A (Tc) Gate-source threshold voltage: 3.5V @ 310uA Drain-source on-resistance: 1.2Ω @ 2.8A, 10V Maximum power dissipation (Ta=25°C): 83W (Tc) Type: N-channel N-channel, 900V, 5.1A | Download |
IPD90R1K2C3AT | Infineon | Power Field-Effect Transistor | Download |
IPD90R1K2C3ATMA1 | Infineon | MOSFET N-Ch 900V 5.1A DPAK-2 | Download |
IPD90R1K2C3BT | Infineon | Power Field-Effect Transistor | Download |
IPD90R1K2C3BTMA1 | Infineon | MOSFET N-Ch 900V 5.1A DPAK-2 CoolMOS C3 | Download |
Part Number | Datasheet |
---|---|
IPD90R1K2C3ATMA1 、 IPD90R1K2C3BTMA1 | Download Datasheet |
IPD90R1K2C3AT 、 IPD90R1K2C3BT | Download Datasheet |
IPD90R1K2C3 | Download Datasheet |
Part Number | IPD90R1K2C3AT | IPD90R1K2C3BT |
---|---|---|
Description | Power Field-Effect Transistor | Power Field-Effect Transistor |
Maker | Infineon | Infineon |
package instruction | , | , |
Reach Compliance Code | compliant | compliant |