Part Number |
GS8182R09BGD-167 |
GS8182R09BGD-167I |
Description |
SRAM 1.8 or 1.5V 2M x 9 18M |
SRAM 1.8 or 1.5V 2M x 9 18M |
Is it lead-free? |
Lead free |
Lead free |
Is it Rohs certified? |
conform to |
conform to |
Maker |
GSI Technology |
GSI Technology |
Parts packaging code |
BGA |
BGA |
package instruction |
LBGA, |
LBGA, |
Contacts |
165 |
165 |
Reach Compliance Code |
compliant |
compliant |
ECCN code |
3A991.B.2.B |
3A991.B.2.B |
Factory Lead Time |
8 weeks |
8 weeks |
Maximum access time |
0.5 ns |
0.5 ns |
Other features |
PIPELINED ARCHITECTURE |
PIPELINED ARCHITECTURE |
JESD-30 code |
R-PBGA-B165 |
R-PBGA-B165 |
JESD-609 code |
e1 |
e1 |
length |
15 mm |
15 mm |
memory density |
18874368 bit |
18874368 bit |
Memory IC Type |
DDR SRAM |
DDR SRAM |
memory width |
9 |
9 |
Humidity sensitivity level |
3 |
3 |
Number of functions |
1 |
1 |
Number of terminals |
165 |
165 |
word count |
2097152 words |
2097152 words |
character code |
2000000 |
2000000 |
Operating mode |
SYNCHRONOUS |
SYNCHRONOUS |
Maximum operating temperature |
70 °C |
85 °C |
organize |
2MX9 |
2MX9 |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
encapsulated code |
LBGA |
LBGA |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
GRID ARRAY, LOW PROFILE |
GRID ARRAY, LOW PROFILE |
Parallel/Serial |
PARALLEL |
PARALLEL |
Peak Reflow Temperature (Celsius) |
260 |
260 |
Certification status |
Not Qualified |
Not Qualified |
Maximum seat height |
1.4 mm |
1.4 mm |
Maximum supply voltage (Vsup) |
1.9 V |
1.9 V |
Minimum supply voltage (Vsup) |
1.7 V |
1.7 V |
Nominal supply voltage (Vsup) |
1.8 V |
1.8 V |
surface mount |
YES |
YES |
technology |
CMOS |
CMOS |
Temperature level |
COMMERCIAL |
INDUSTRIAL |
Terminal surface |
Tin/Silver/Copper (Sn/Ag/Cu) |
Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal form |
BALL |
BALL |
Terminal pitch |
1 mm |
1 mm |
Terminal location |
BOTTOM |
BOTTOM |
Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
width |
13 mm |
13 mm |