Parameter Name | Attribute value |
Brand Name | ON Semiconductor |
Is it lead-free? | Lead free |
package instruction | SMALL OUTLINE, R-PDSO-N8 |
Manufacturer packaging code | 483AU |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Factory Lead Time | 26 weeks |
Avalanche Energy Efficiency Rating (Eas) | 121 mJ |
Shell connection | SOURCE |
Configuration | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain current (Abs) (ID) | 21 A |
Maximum drain current (ID) | 7 A |
Maximum drain-source on-resistance | 0.02 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | MO-229 |
JESD-30 code | R-PDSO-N8 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 2 |
Number of terminals | 8 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 23 W |
Maximum pulsed drain current (IDM) | 80 A |
surface mount | YES |
Terminal surface | Tin (Sn) |
Terminal form | NO LEAD |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |