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FDA28N50

Among 6 related components, FDA28N50 have related pdf.
Part Number Manufacturer Description Datasheet
FDA28N50 Fairchild Fixed Inductors 1008 2.2uH 110mOhms +/-20%Tol 1.9A HiCur Download
FDA28N50 ISC isc N-Channel MOSFET Transistor Download
FDA28N50 ON Semiconductor Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 28A Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 155mΩ @ 14A, 10V Maximum power dissipation (Ta= 25°C): 310W Type: N-channel N-channel Download
FDA28N50F Fairchild Gate Drivers HALF BRDG DRVR 600V 15.6Vclamp 0.6 Download
FDA28N50F ON Semiconductor MOSFET N-CH 500V 28A TO-3PN Download
FDA28N50F_12 Fairchild N-Channel MOSFET 500V, 28A, 0.175Ω Download
FDA28N50 parameters:

Description

漏源电压(Vdss):500V 连续漏极电流(Id)(25°C 时):28A 栅源极阈值电压:5V @ 250uA 漏源导通电阻:155mΩ @ 14A,10V 最大功率耗散(Ta=25°C):310W 类型:N沟道 N沟道

Parametric
Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor(安森美)
package instructionFLANGE MOUNT, R-PSFM-T3
Manufacturer packaging code340BZ
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time9 weeks
Avalanche Energy Efficiency Rating (Eas)2391 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)28 A
Maximum drain current (ID)28 A
Maximum drain-source on-resistance0.155 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)310 W
Maximum pulsed drain current (IDM)112 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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