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CSD17302Q5A

Among 2 related components, CSD17302Q5A have related pdf.
Part Number Manufacturer Description Datasheet
CSD17302Q5A Texas Instruments 30V, N ch NexFET MOSFET™, single SON5x6, 9mOhm 8-VSONP -55 to 150 Download
CSD17302Q5A_10 Texas Instruments The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. Download
CSD17302Q5A parameters:

Description

30V, N ch NexFET MOSFET™, single SON5x6, 9mOhm 8-VSONP -55 to 150

Parametric
Parameter NameAttribute value
Brand NameTexas Instruments
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerTexas Instruments(德州仪器)
package instruction6 X 5 MM, ROHS COMPLIANT, PLASTIC, SON-8
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time12 weeks
Is SamacsysN
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)61 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)87 A
Maximum drain current (ID)87 A
Maximum drain-source on-resistance0.0128 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)45 pF
JESD-30 codeR-PDSO-N8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3 W
Maximum pulsed drain current (IDM)104 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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