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AUIRFZ48Z

Showing 8 Results for AUIRFZ48Z, including AUIRFZ48Z,AUIRFZ48Z, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
AUIRFZ48Z International Rectifier ( Infineon ) AUTOMOTIVE GRADE Download
AUIRFZ48Z Infineon MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms Download
AUIRFZ48ZS International Rectifier ( Infineon ) AUTOMOTIVE GRADE Download
AUIRFZ48ZS Infineon MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms Download
AUIRFZ48ZSTRL International Rectifier ( Infineon ) mosfet auto 55v 1 N-CH hexfet 11mohms Download
AUIRFZ48ZSTRL Infineon MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms Download
AUIRFZ48ZSTRR International Rectifier ( Infineon ) mosfet auto 55v 1 N-CH hexfet 11mohms Download
AUIRFZ48ZSTRR Infineon MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms Download
AUIRFZ48Z Related Product Datasheets:
Part Number Datasheet
AUIRFZ48ZSTRL 、 AUIRFZ48ZSTRR Download Datasheet
AUIRFZ48Z 、 AUIRFZ48ZSTRL Download Datasheet
AUIRFZ48ZSTRR Download Datasheet
AUIRFZ48ZS Download Datasheet
AUIRFZ48Z Download Datasheet
AUIRFZ48ZS Download Datasheet
AUIRFZ48Z Related Products:
Part Number AUIRFZ48Z AUIRFZ48ZSTRL
Description MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms
Is it Rohs certified? conform to conform to
package instruction ROHS COMPLIANT, PLASTIC PACKAGE-3 ROHS COMPLIANT, PLASTIC, D2PAK-3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Factory Lead Time 16 weeks 16 weeks
Is Samacsys N N
Other features AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas) 120 mJ 120 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V
Maximum drain current (Abs) (ID) 61 A 61 A
Maximum drain current (ID) 61 A 61 A
Maximum drain-source on-resistance 0.011 Ω 0.011 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-263AB
JESD-30 code R-PSFM-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 91 W 91 W
Maximum pulsed drain current (IDM) 240 A 240 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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