Part Number |
Manufacturer |
Description |
Datasheet |
8N80 |
UNISONIC TECHNOLOGIES CO.,LTD |
800V N-CHANNEL MOSFET |
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|
8N80 |
ISC |
Drain Current âID= 8A@ TC=25C |
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|
8N80 |
Nell |
N-Channel Power MOSFET |
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|
8N80G-TA3-T |
UNISONIC TECHNOLOGIES CO.,LTD |
800V N-CHANNEL MOSFET |
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|
8N80G-TF1-T |
UNISONIC TECHNOLOGIES CO.,LTD |
800V N-CHANNEL MOSFET |
Download
|
8N80G-TF2-T |
UNISONIC TECHNOLOGIES CO.,LTD |
Power Field-Effect Transistor, 8A I(D), 800V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F2, 3 PIN |
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|
8N80G-TF3-T |
UNISONIC TECHNOLOGIES CO.,LTD |
Power Field-Effect Transistor, 8A I(D), 800V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN |
Download
|
8N80L-TA3-T |
UNISONIC TECHNOLOGIES CO.,LTD |
800V N-CHANNEL MOSFET |
Download
|
8N80L-TF1-T |
UNISONIC TECHNOLOGIES CO.,LTD |
800V N-CHANNEL MOSFET |
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|
8N80L-TF1-T |
UTC(Unisonic Technologies Co., Ltd.) |
Drain-source voltage (Vdss): 800V Continuous drain current (Id) (at 25°C): 8A Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 1.45Ω @ 4A, 10V Maximum power dissipation (Ta =25°C): 59W Type: N-channel N-channel, 800V, 8A, 1.45Ω@10V |
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|
8N80L-TF2-T |
UNISONIC TECHNOLOGIES CO.,LTD |
Power Field-Effect Transistor, 8A I(D), 800V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F2, 3 PIN |
Download
|
8N80L-TF3-T |
UNISONIC TECHNOLOGIES CO.,LTD |
Power Field-Effect Transistor, 8A I(D), 800V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN |
Download
|
8N8R0L |
ADPOW |
N-CHANNEL ENHANCEMENT MODE |
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|