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2SD555

Showing 8 Results for 2SD555, including 2SD555,2SD555, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
2SD555 ISC Silicon NPN Power Transistors Download
2SD555 SAVANTIC 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset Download
2SD555 Inchange Semiconductor Transistor Download
2SD555 - TRANSISTOR Download
2SD555 NEC Electronics Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, Download
2SD555Q NEC Electronics Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, Download
2SD555R NEC Electronics Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, Download
2SD555S NEC Electronics Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, Download
2SD555 Related Product Datasheets:
Part Number Datasheet
2SD555 、 2SD555Q 、 2SD555R 、 2SD555S Download Datasheet
2SD555 Download Datasheet
2SD555 Download Datasheet
2SD555 Download Datasheet
2SD555 Related Products:
Part Number 2SD555S 2SD555 2SD555Q 2SD555R
Description Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
Reach Compliance Code unknown unknow unknown unknown
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 10 A 10 A 10 A 10 A
Collector-emitter maximum voltage 200 V 200 V 200 V 200 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 100 60
JEDEC-95 code TO-3 TO-3 TO-3 TO-3
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN
Maximum power consumption environment 200 W 200 W 200 W 200 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 15 MHz 15 MHz 15 MHz 15 MHz
VCEsat-Max 3 V 3 V 3 V 3 V
Base Number Matches 1 - 1 1

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