Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
2SD555 | ISC | Silicon NPN Power Transistors | Download |
2SD555 | SAVANTIC | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset | Download |
2SD555 | Inchange Semiconductor | Transistor | Download |
2SD555 | - | TRANSISTOR | Download |
2SD555 | NEC Electronics | Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Download |
2SD555Q | NEC Electronics | Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Download |
2SD555R | NEC Electronics | Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Download |
2SD555S | NEC Electronics | Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Download |
Part Number | Datasheet |
---|---|
2SD555 、 2SD555Q 、 2SD555R 、 2SD555S | Download Datasheet |
2SD555 | Download Datasheet |
2SD555 | Download Datasheet |
2SD555 | Download Datasheet |
Part Number | 2SD555S | 2SD555 | 2SD555Q | 2SD555R |
---|---|---|---|---|
Description | Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 10A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, |
Reach Compliance Code | unknown | unknow | unknown | unknown |
Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
Maximum collector current (IC) | 10 A | 10 A | 10 A | 10 A |
Collector-emitter maximum voltage | 200 V | 200 V | 200 V | 200 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 40 | 40 | 100 | 60 |
JEDEC-95 code | TO-3 | TO-3 | TO-3 | TO-3 |
JESD-30 code | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
Number of components | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
Package body material | METAL | METAL | METAL | METAL |
Package shape | ROUND | ROUND | ROUND | ROUND |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Polarity/channel type | NPN | NPN | NPN | NPN |
Maximum power consumption environment | 200 W | 200 W | 200 W | 200 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO |
Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 15 MHz | 15 MHz | 15 MHz | 15 MHz |
VCEsat-Max | 3 V | 3 V | 3 V | 3 V |
Base Number Matches | 1 | - | 1 | 1 |