Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
2N3583 | MOSPEC | 1 A, 175 V, NPN, Si, POWER TRANSISTOR, TO-66 | Download |
2N3583 | BOCA | 1 A, 175 V, NPN, Si, POWER TRANSISTOR, TO-66 | Download |
2N3583 | COMSET | 1 A, 175 V, NPN, Si, POWER TRANSISTOR, TO-66 | Download |
2N3583 | ISC | 1 A, 175 V, NPN, Si, POWER TRANSISTOR, TO-66 | Download |
2N3583 | New Jersey Semiconductor | 1 A, 175 V, NPN, Si, POWER TRANSISTOR, TO-66 | Download |
2N3583 | Advanced Semiconductor, Inc. | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | Download |
2N3583 | Solitron Devices Inc. | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | Download |
2N3583 | SSDI | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | Download |
2N3583 | API Technologies | Power Bipolar Transistor, 5A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, | Download |
2N3583 | SEME-LAB | 1 A, 175 V, NPN, Si, POWER TRANSISTOR, TO-66 | Download |
2N3583 | Semiconductor Technology Inc | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | Download |
2N3583 | Central Semiconductor | Bipolar Transistors - BJT NPN High Power | Download |
2N3583 | General Transistor Corp | Transistor | Download |
2N3583 | Microsemi | Bipolar Transistors - BJT Power BJT | Download |
2N3583 | All Sensors | bipolar npn device in a hermetically sealed to66 | Download |
2N3583 | - | GERMANIUM PNP TRANSISTORS | Download |
2N3583 | Motorola ( NXP ) | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, METAL PACKAGE-2 | Download |
2N3583 | FREESCALE (NXP) | TRANSISTOR,BJT,NPN,175V V(BR)CEO,1A I(C),TO-66 | Download |
2N3583_12 | COMSET | NPN SILICON POWER TRANSISTORS. | Download |
2N3583_15 | Central Semiconductor | SILICON NPN TRANSISTORS | Download |
2N3583LEADFREE | Central Semiconductor | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | Download |
2N3583 LEADFREE | Central Semiconductor | Bipolar Transistors - BJT NPN High Power | Download |
2N3583.MOD | SEMELAB | 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN | Download |
2N3583.MOD | TT Electronics plc | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN | Download |
2N3583.MODR1 | SEMELAB | 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN | Download |
2N3583.MODR1 | TT Electronics plc | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN | Download |
2N3583R1 | TT Electronics plc | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN | Download |
2N3583R1 | SEMELAB | 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN | Download |
Part Number | Datasheet |
---|---|
2N3583.MOD 、 2N3583.MOD 、 2N3583.MODR1 、 2N3583.MODR1 、 2N3583R1 、 2N3583R1 | Download Datasheet |
2N3583 | Download Datasheet |
2N3583 | Download Datasheet |
2N3583 | Download Datasheet |
2N3583 | Download Datasheet |
2N3583 LEADFREE | Download Datasheet |
2N3583_15 | Download Datasheet |
2N3583_12 | Download Datasheet |
2N3583 | Download Datasheet |
2N3583LEADFREE | Download Datasheet |
Part Number | 2N3583R1 | 2N3583.MOD | 2N3583.MOD | 2N3583.MODR1 | 2N3583.MODR1 | 2N3583R1 |
---|---|---|---|---|---|---|
Description | 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN | 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN | 1A, 175V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN | Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-66, 2 PIN |
Is it Rohs certified? | conform to | incompatible | incompatible | conform to | conform to | conform to |
package instruction | FLANGE MOUNT, O-MBFM-P2 | HERMETIC SEALED, METAL, TO-66, 2 PIN | FLANGE MOUNT, O-MBFM-P2 | HERMETIC SEALED, METAL, TO-66, 2 PIN | FLANGE MOUNT, O-MBFM-P2 | HERMETIC SEALED, METAL, TO-66, 2 PIN |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
Maximum collector current (IC) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
Collector-emitter maximum voltage | 175 V | 175 V | 175 V | 175 V | 175 V | 175 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 40 | 40 | 40 | 40 | 40 | 40 |
JEDEC-95 code | TO-213AA | TO-213AA | TO-213AA | TO-213AA | TO-213AA | TO-213AA |
JESD-30 code | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
Package body material | METAL | METAL | METAL | METAL | METAL | METAL |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO | NO | NO |
Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 10 MHz | 10 MHz | 10 MHz | 10 MHz | 10 MHz | 10 MHz |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
JESD-609 code | e1 | - | - | e1 | e1 | e1 |
Terminal surface | TIN SILVER COPPER | - | - | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER |