MCP601/602/603/604
2.7V to 5.5V Single Supply CMOS Op Amps
FEATURES
•
•
•
•
•
•
•
•
•
Specifications rated from 2.7V to 5.5V supplies
Rail-to-rail swing at output
Common-mode input swing below ground
2.8MHz GBWP
Unity gain stable
Low power I
DD
= 325µA max
Chip Select capability with MCP603
Industrial temperature range (-40°C to 85°C)
Available in single, dual and quad
PACKAGES
MCP601
PDIP, SOIC, TSSOP
NC 1
-IN 2
+IN 3
V
SS
4
8 NC
MCP602
PDIP, SOIC, TSSOP
OUTA 1
-INA 2
+INA 3
V
SS
4
8 V
DD
-
+
7 V
DD
6 OUT
5 NC
-
+
B
+
-
A
7 OUTB
6 -INB
5 +INB
APPLICATIONS
•
•
•
•
•
•
•
Portable Equipment
A/D Converter Driver
Photodiode Pre-amps
Analog Filters
Data Acquisition
Notebooks and PDAs
Sensor Interface
MCP603
PDIP, SOIC, TSSOP
NC 1
-IN 2
+IN 3
V
SS
4
8 CS
OUTA 1
-INA 2
+INA 3
V
DD
4
+INB 5
-INB 6
OUTB 7
MCP604
PDIP, SOIC, TSSOP
14 OUTD
-
+
7 V
DD
6 OUT
5 NC
-
A
+
+
D
-
13 -IND
12 +IND
11 V
SS
10 +INC
-
B
+
+
C
-
9 -INC
8 OUTC
AVAILABLE TOOLS
• Spice Macromodels (at www.microchip.com)
•
FilterLab™
Software (at www.microchip.com)
©
1999 Microchip Technology Inc.
TYPICAL APPLICATION
DESCRIPTION
The Microchip Technology Inc. MCP601/602/603/604
family of low power operational amplifiers are offered in
single (MCP601), single with a Chip Select pin feature
(MCP603), dual (MCP602) and quad (MCP604) config-
urations. These operational amplifiers (op amps) utilize
an advanced CMOS technology, which provides low
bias current, high speed operation, high open-loop gain
and rail-to-rail output swing. This product offering oper-
ates with a single supply voltage that can be as low as
2.7V, while drawing less than 325µA of quiescent cur-
rent. In addition, the common-mode input voltage
range goes 0.3V below ground, making these amplifi-
ers ideal for single supply operation.
These devices are appropriate for low-power battery
operated circuits due to the low quiescent current, for
A/D Converter driver amplifiers because of their wide
bandwidth, or for anti-aliasing filters by virtue of their
low input bias current.
V
IN
-IN
V
DD
V
OUT
OUT
MCP60X
+IN
V
REF
Low Input Bias
Current Over
Temperature
V
SS
Rail-to-Rail
Output Swing
2nd Order Low Pass Filter
The MCP601, MCP602 and MCP603 are available in
standard 8-lead PDIP, SOIC and TSSOP packages.
The quad MCP604 is offered in 14-lead PDIP, SOIC
and TSSOP packages. PDIP and SOIC packages are
fully specified from -40°C to +85°C with power supplies
from 2.7V to 5.5V.
©
1999 Microchip Technology Inc.
DS21314C-page 1
MCP601/602/603/604
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Maximum Ratings*
PIN FUNCTION TABLE
NAME
+IN, +INA, +INB, +INC, +IND
-IN, -INA, -INB, -INC, -IND
V
DD
V
SS
FUNCTION
Non-inverting Input
Terminals
Inverting Input Terminals
Positive Power Supply
Negative Power Supply
V
DD
..................................................................................7.0V
All inputs and outputs w.r.t. ............. V
SS
-0.3V to V
DD
+0.3V
Difference Input voltage ....................................... |V
DD
- V
SS
|
Output Short Circuit Current .................................continuous
Current at Input Pin .......................................................±2mA
Current at Output and Supply Pins .............................±30mA
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied ................-55°C to +125°C
Soldering temperature of leads (10 seconds) ............. +300°C
*Notice:
Stresses above those listed under “Maximum Ratings”
may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at those or any
other conditions above those indicated in the operational listings
of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
OUT, OUTA, OUTB, OUTC, OUTD Output Terminals
CS
NC
Chip Select
No internal connection
to IC
DC CHARACTERISTICS
Unless otherwise indicated, all limits are specified for V
DD
= +2.7V to +5.5V, V
SS
= GND, T
A
= 25 °C, V
CM
= V
DD
/2, R
L
= 100kΩ to
V
DD
/2, and V
OUT
~ V
DD
/2
PARAMETERS
INPUT OFFSET VOLTAGE
Input Offset Voltage
Over Temperature
(1)
Drift with Temperature
Power Supply Rejection
INPUT CURRENT AND IMPEDANCE
Input Bias Current
Over Temperature
(1)
Input Offset Bias Current
Common Mode Input Impedance
Differential Input Impedance
COMMON MODE
Common-Mode Input Range
Common-Mode Rejection Ratio
OPEN LOOP GAIN
DC Open Loop Gain
SYMBOL
V
OS
V
OS
dV
OS
/dT
PSRR
I
B
I
B
I
OS
Z
CM
Z
DIFF
V
CM
CMRR
V
SS
−0.3
75
90
MIN
-2
-3
±2.5
40
1
20
1
10
13
||6
10
13
||3
V
DD
−1.2
60
100
TYP
MAX
+2
+3
UNITS
mV
mV
µV/°C
µV/V
pA
pA
pA
Ω||pF
Ω||pF
V
dB
V
DD
= 5V,
V
CM
= 0 to 3.8V
R
L
= 25kΩ to V
DD
/2,
50mV < V
OUT
<
(V
DD
−
50 mV)
R
L
= 5kΩ to V
DD
/2,
100mV < V
OUT
<
(V
DD
−
100mV)
R
L
= 25kΩ to V
DD
/2
R
L
= 5kΩ to V
DD
/2
R
L
= 25kΩ to V
DD
/2,
A
OL
≥
100dB
R
L
= 5kΩ to V
DD
/2,
A
OL
≥
95dB
V
OUT
= 2.5V,
V
DD
= 5V
T
A
= -40°C to +85°C
T
A
= -40°C to +85°C
T
A
= -40°C to +85°C
for V
DD
= 2.7V to 5.5V
CONDITIONS
A
OL
100
110
dB
DC Open Loop Gain
A
OL
95
102
dB
OUTPUT
Low Level/High Level Output Swing
V
OL
, V
OH
V
OL
, V
OH
V
SS
+ 0.015
V
SS
+ 0.045
V
SS
+ 0.050
V
SS
+ 0.100
20
V
DD
−
0.020
V
DD
−
0.060
V
DD
−
0.050
V
DD
−
0.100
V
V
V
V
mA
Linear Region Maximum Output
Voltage Swing
V
OUT
V
OUT
Output Short Circuit Current
POWER SUPPLY
Supply Voltage
Quiescent Current Per Amp
I
SC
V
DD
I
Q
2.7
230
5.5
325
V
µA
I
L
= 0
Note 1:
Max. and Min. specified for PDIP and SOIC packages only. Typical refers to all packages.
DS21314C-page 2
©
1999 Microchip Technology Inc.
MCP601/602/603/604
AC CHARACTERISTICS
Unless otherwise indicated, all limits are specified for V
DD
= +2.7V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2, R
L
= 100kΩ to
V
DD
/2, and V
OUT
~ V
DD
/2
PARAMETERS
Gain Bandwidth Product
Phase Margin
Slew Rate
Setting Time to 0.01%
SYMBOL
GBWP
Θ
m
SR
MIN
TYP
2.8
50
2.3
4.5
MAX
UNITS
MHz
degrees
V/µs
µs
CONDITIONS
V
DD
= 5V
C
L
= 50pF, V
DD
= 5V
G = +1V/V, V
DD
= 5V
for
∆V
OUT
= 3.8V
STEP
,
C
L
= 50pF, V
DD
= 5V,
G = +1V/V
NOISE
Input Voltage Noise
Input Voltage Noise Density
Input Current Noise Density
e
n
e
n
i
n
7
29
0.6
µV
P-P
nV/ Hz
fA/ Hz
f = 0.1Hz to 10Hz
f = 1kHz
f = 1kHz
SPECIFICATIONS FOR MCP603 CHIP SELECT FEATURE
Unless otherwise indicated, all limits are specified for V
DD
= +2.7V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2, R
L
= 100kΩ to
V
DD
/2, and V
OUT
~ V
DD
/2
PARAMETERS
CS LOW SPECIFICATIONS
CS Logic Threshold, Low
CS Input Current, Low
Amplifier Output Leakage, CS High
CS HIGH SPECIFICATIONS
CS Logic Threshold, High
CS Input High, Shutdown CS Pin
Current
CS Input High, Shutdown GND
Current
DYNAMIC SPECIFICATIONS
CS Low to Amplifier Output High
Turn-on Time
CS High to Amplifier Output High Z
CS Threshold Hysteresis
t
ON
t
OFF
3.1
100
0.3
10
µs
ns
V
CS low
≤
0.2V
DD
CS high
≥
0.8V
DD
, No
Load
V
IH
I
CSH
I
Q
0.8 V
DD
0.51 V
DD
0.7
0.7
V
DD
2.0
2.0
V
µA
µA
For entire V
DD
range
CS = V
DD
CS = V
DD
V
IL
I
CSL
V
SS
-1.0
1
0.42 V
DD
0.2 V
DD
V
µA
nA
For entire V
DD
range
CS = 0.2V
DD
SYMBOL
MIN
TYP
MAX
UNITS
CONDITIONS
TEMPERATURE SPECIFICATIONS
Unless otherwise indicated, all limits are specified for V
DD
= +2.7V to +5.5V, V
SS
= GND
PARAMETERS
TEMPERATURE RANGE
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
THERMAL PACKAGE RESISTANCE
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-TSSOP
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
85
163
124
70
120
100
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
-40
-40
-65
+85
+85
+150
°C
°C
°C
SYMBOL
MIN
TYP
MAX
UNITS
CONDITIONS
©
1999 Microchip Technology Inc.
DS21314C-page 3
MCP601/602/603/604
2.0
TYPICAL PERFORMANCE
CURVES
Note:
Unless otherwise indicated, V
DD
= +2.7V to +5.5V, T
A
= 25°C, V
CM
= V
DD
/2, R
L
= 25kΩ to V
DD
/2 and V
OUT
~ V
DD
/2
260
I
L
= 0
Quiescent Current per Amplifier (µA)
240
220
200
180
160
140
120
100
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power Supply, V
DD
(V)
120
100
Open Loop Gain (dB)
80
60
40
20
0
-20
-40
-60
0
0.1
10
10
Phase
Gain
100
50
0
-50
-100
-150
-200
-250
1000
100000 10000000
1K
100K
10M
Frequency (Hz)
FIGURE 2-1:
Frequency
Open Loop Gain, Phase Margin vs.
Phase Margin (degrees)
C
L
= 50pF,
R
L
= 100kΩ
V
DD
= 5V
200
150
FIGURE 2-4:
Quiescent Current vs. Power Supply
300
3
Slew Rate (V/
µ
s)
High-to-Low
Transition
C
L
=50pF,
R
L
=100kΩ,
V
DD
=5V
Quiescent Current per Amplifier (µA)
3.5
280
260
240
220
200
180
160
140
120
100
V
DD
= 2.7V
V
DD
= 5.5V
I
L
=0
2.5
Low-to-High
Transition
2
1.5
1
-40
-20
0
20
40
60
80
Temperature (°C)
-40
-20
0
20
40
60
80
Temperature (°C)
FIGURE 2-2:
Slew Rate vs. Temperature
FIGURE 2-5:
10000
Input Voltage Noise Density (nV/
√Hz)
Quiescent Current vs. Temperature
4.5
4
Gain Bandwidth Product (MHz)
3.5
3
2.5
2
1.5
1
0.5
0
-40
-20
0
20
40
60
80
Temperature (°C)
Phase
C
L
= 55pF
Gain Bandwidth Product
85
80
Phase Margin (degrees)
75
70
65
60
55
50
45
40
R
L
= 10kΩ
1000
100
10
0.1
1
10
100
1k
10k
100k
1M
Frequency (Hz)
FIGURE 2-3:
Temperature
Gain Bandwidth Product vs.
FIGURE 2-6:
Frequency
Input
Voltage
Noise
Density
vs.
DS21314C-page 4
©
1999 Microchip Technology Inc.
MCP601/602/603/604
Note:
Unless otherwise indicated, V
DD
= +2.7V to +5.5V, T
A
= 25°C, V
CM
= V
DD
/2, R
L
= 25kΩ to V
DD
/2 and V
OUT
~ V
DD
/2
500
400
300
Offset Voltage (µV)
200
100
0
-100
-200
-300
-400
-500
-40
-20
0
20
40
60
80
Temperature (°C)
V
DD
= 5.5V
V
DD
= 2.7V
R
L
= 100kΩ
Common Mode Rejection Ratio,
Power Supply Rejection Ratio (dB)
95
100
CMRR
V
DD
= 2.7V
V
CM
= -0.3V to 1.5V
PSRR,
V
DD
= 2.7V to 5.5V
CMRR
V
DD
= 5.5V
V
CM
= -0.3V to 4.3V
90
85
80
75
-40
-20
0
20
40
60
80
Temperature (° C)
FIGURE 2-7:
Normalized Offset Voltage vs. Temper-
ature with V
DD
= 2.7V
FIGURE 2-10:
Common-Mode Rejection Ratio,
Power Supply Rejection Ratio vs. Temperature
240
220
200
Offset Voltage (µV)
180
160
140
120
100
80
60
40
-1
0
1
2
3
4
5
Common Mode Voltage (V)
V
DD
= 2.7V
V
DD
= 5.5V
Representative Part
100
80
PSRR, CMRR (dB)
PSRR+
PSRR-
CMRR
V
DD
=5.0V,
C
L
=50 pF
60
40
20
0
-20
1
10
1.E+00 1.E+01
100
1.E+02
1K
10K
1.E+03 1.E+04
Frequency (Hz)
100K
1.E+05
1M
1.E+06
10M
1.E+07
FIGURE 2-8:
Voltage
Offset Voltage vs. Common-Mode
FIGURE 2-11:
Common-Mode
Rejection
Power Supply Rejection Ratio vs. Frequency
Ratio,
20
Input Bias Current, Input Offset Current (pA)
18
16
14
12
10
8
6
4
2
0
-40
-20
0
20
40
60
80
Temperature (°C)
Input Bias Current Levels are Typically
less than 1pA Below 25°C
Input Bias Current
Input Bias, Input Offset Current (pA)
20
V
DD
= 5.5V
18
16
14
12
10
8
6
4
2
0
0
V
DD
= 5.5V
R
L
=
∞
T
A
= 85°C
Input Bias Current
Input
Offset
Current
Input Offset
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Common-mode Voltage (V)
FIGURE 2-9:
Input Bias Current, Input Offset
Current vs. Temperature
FIGURE 2-12:
Input Bias Current, Input Offset
Current vs. Common Mode Input Voltage
©
1999 Microchip Technology Inc.
DS21314C-page 5