RO-P-DS-3079
Preliminary Information
24.5 –29.0 GHz 0.5 W Power Amplifier
MAAPGM0049-DIE
MAAPGM0049-DIE
Features
♦
♦
♦
♦
0.5 Watt Saturated Output Power Level
Variable Drain Voltage (5-8V) Operation
GaAs MSAG
®
Process
Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The
MAAPGM0049-Die
is a 3-stage power amplifier with on-chip
bias networks. This product is fully matched to 50 ohms on both
the input and output. It can be used as a power amplifier stage or
as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate (MSAG
®
)
MESFET Process, each device is 100% RF tested on wafer to
ensure performance compliance.
M/A-COM’s MSAG process features robust silicon-like manufac-
turing processes, planar processing of ion implanted transistors,
multiple implant capability enabling power, low-noise, switch and
digital FETs on a single chip, and polyimide scratch protection for
ease of use with automated manufacturing processes. The use
of refractory metals and the absence of platinum in the gate
metal formulation prevents hydrogen poisoning when employed
in hermetic packaging
.
Primary Applications
♦
Point to Point (27.5-29.5)
♦
SatCom
♦
MSSS Uplink
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50W, V
DD
= 6V, I
DQ
≈
410 mA, P
in
= 17 dBm , RG
≈
174
Ω
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Output Third Order Intercept
Input VSWR
Output VSWR
Gate Supply Current
Drain Supply Current
Symbol
f
POUT
PAE
P1dB
G
OTOI
VSWR
VSWR
IGG
IDD
Typical
24.5-29.0
27
20
27
13
35
2 :1
2.5:1
< 10
< 600
mA
mA
Units
GHz
dBm
%
dBm
dB
1.
2.
1. T
B
= MMIC Base Temperature
Adjust V
GG
between –2.4 and –1.5V to achieve I
DQ
indicated.
RO-P-DS-3079
24.5-29.0 GHz 0.5 W Power Amplifier
Maximum Operating Conditions
3
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF, 40% Idss)
Quiescent Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Die Attach Temperature
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
j
T
STG
Absolute Maximum
22.0
+10.0
655
380
2.5
180
-55 to +150
310
MAAPGM0049-DIE
Units
dBm
V
V
mA
W
°C
°C
°C
3. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Drain Supply Voltage
Gate Supply Voltage
Input Power
Junction Temperature
Thermal Resistance
MMIC Base Temperature
Symbol
V
DD
V
GG
P
IN
T
J
Θ
JC
TB
31.3
Note 2
Min
4.0
-2.3
Typ
6.0
-2.0
Max
10.0
-1.5
20.0
150
Unit
V
V
dBm
°C
°C/W
°C
4. Maximum MMIC Base Temperature = 150°C —
Θ
JC
* V
DD
* I
DQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 10 V.
3. Adjust
V
GG
to set I
DQ
.
4. Set RF input.
5.
Power down sequence in reverse. Turn V
GG
off
last.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
V 1.00
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3079
24.5-29.0 GHz 0.5 W Power Amplifier
MAAPGM0049-DIE
50
POUT
PAE
40
50
50
VDD = 6
VDD = 8
VDD = 5
VDD = 7
40
40
POUT (dBm)
P1dB (dBm)
PAE(%)
30
30
30
20
20
20
10
10
10
0
24.0
24.5
25.0
25.5
26.0
26.5
27.0
27.5
28.0
28.5
29.0
0
29.5
0
24.0
24.5
25.0
25.5
26.0
26.5
27.0
27.5
28.0
28.5
29.0
29.5
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency
at V
DD
= 6V and P
in
= 17 dBm
Frequency (GHz)
Figure 2. 1dBCom
pression Point vs. Drain Voltage
50
24.5 GHz
40
27.0 GHz
29.0 GHz
50
POUT
PAE
40
50
40
POUT (dBm)
20
20
20
10
10
10
0
-1
1
3
5
7
9
11
13
15
17
19
0
5.0
5.5
6.0
6.5
7.0
7.5
0
8.0
PIN (dBm)
Figure 3. Output Power vs. Input Power
at V
DD
= 6V
20
Gain
Input VSWR
Output VSWR
16
5
6
Drain Voltage (volts)
Figure 4. Saturated Output Power and Power Added Efficiency vs. Drain Voltage
at f
o
= 27 GHz
Gain (dB)
12
4
8
3
4
2
0
24.0
24.5
25.0
25.5
26.0
26.5
27.0
27.5
28.0
28.5
1
29.0
Frequency (GHz)
Figure 5. Small Signal Gain and VSWR vs Frequency at V
DD
= 6 V and
P
IN
= 17 dBm
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
V 1.00
Visit www.macom.com for additional data sheets and product information.
VSWR
PAE(%)
30
POUT (dBm)
30
30
RO-P-DS-3079
24.5-29.0 GHz 0.5 W Power Amplifier
MAAPGM0049-DIE
Mechanical Information
Chip Size: 3.000 x 3.000 x 0.075 mm
3.000mm
0.365mm
(
118
x 118 x 3 mils)
2.834mm.
2.835mm.
V
D
V
G
3.000mm
2.842mm.
1.504mm
1.504mm.
OUT
IN
0.162mm
0
0
V
D
V
G
0.162mm.
0.365mm
2.834mm
Figure 6. Die Layout
Bond Pad Dimensions
Pad
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
Size (µm)
100 x 200
150 x 150
150 x 150
Size (mils)
4x8
6x6
6x6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
V 1.00
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3079
24.5-29.0 GHz 0.5 W Power Amplifier
MAAPGM0049-DIE
V
GG
0.1
µF
0.1
µF
V
DD
100 pF
100 pF
V
G
V
G
RF
IN
OUT
IN
RF
OUT
V
G
V
G
100 pF
100 pF
Figure 7. Recommended bonding diagram
for pedestal mount.
Support circuitry typical of MMIC characterization fixture for CW testing.
Assembly Instructions:
Die attach:
Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding:
Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For
DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of
shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to V
GG
before applying positive bias to V
DD
to prevent
damage to amplifier.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
V 1.00
Visit www.macom.com for additional data sheets and product information.
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