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Low Power 350 MHz
Voltage Feedback Amplifiers
AD8038/AD8039
FEATURES
Low Power
1 mA Supply Current/Amp
High Speed
350 MHz, –3 dB Bandwidth (G = +1)
425 V/ s Slew Rate
Low Cost
Low Noise
8 nV/√Hz @ 100 kHz
600 fA/√Hz @ 100 kHz
Low Input Bias Current: 750 nA Max
Low Distortion
–90 dB SFDR @ 1 MHz
–65 dB SFDR @ 5 MHz
Wide Supply Range: 3 V to 12 V
Small Packaging: SOT-23-8, SC70-5, and SOIC-8
APPLICATIONS
Battery-Powered Instrumentation
Filters
A/D Drivers
Level Shifting
Buffering
High Density PC Boards
Photo Multipliers
CONNECTION DIAGRAMS
SOIC-8 (R)
NC
1
–IN
2
+IN
3
–V
S 4
SC70-5 (KS)
V
OUT 1
–V
S 2
+IN
3
AD8038
8
7
6
5
DISABLE
+V
S
V
OUT
NC
AD8038
5
+V
S
+ –
4
–IN
NC = NO CONNECT
SOIC-8 (R) and SOT-23-8 (RT)
AD8039
V
OUT1 1
–IN1
2
+IN1
3
–V
S 4
8
+V
S
7
V
OUT2
6
–IN2
5
+IN2
capacitive loads up to 15 pF. If driving larger capacitive loads,
a small series resistor is needed to avoid excessive peaking or
overshoot.
The AD8039 amplifier is the only dual, low power, high speed
amplifier available in a tiny SOT-23-8 package, and the single
AD8038 is available in both a SOIC-8 and an SC70-5 package.
These amps are rated to work over the industrial temperature
range of –40°C to +85°C.
24
21
18
15
GAIN – dB
PRODUCT DESCRIPTION
The AD8038 (single) and AD8039 (dual) amplifiers are high
speed (350 MHz) voltage feedback amplifiers with an exception-
ally low quiescent current of 1.0 mA/amplifier typical (1.5 mA max).
The AD8038 single amplifier in the SOIC-8 package has a dis-
able feature. Despite being low power and low cost, the amplifier
provides excellent overall performance. Additionally, it offers
a high slew rate of 425 V/µs and low input offset voltage of
3 mV max.
ADI’s proprietary XFCB process allows low noise operation
(8 nV/√Hz and 600 fA/√Hz) at extremely low quiescent currents.
Given a wide supply voltage range (3 V to 12 V), wide band-
width, and small packaging, the AD8038 and AD8039 amplifiers
are designed to work in a variety of applications where power and
space are at a premium.
The AD8038 and AD8039 amplifiers have a wide input common-
mode range of 1 V from either rail and will swing within 1 V of
each rail on the output. These amplifiers are optimized for driving
G = +10
G = +5
12
9
G = +2
6
3
G = +1
0
–3
–6
0.1
1
10
FREQUENCY – MHz
100
1000
Figure 1. Small Signal Frequency Response for
Various Gains, V
OUT
= 500 mV p-p, V
S
=
±
5 V
REV. F
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© 2004 Analog Devices, Inc. All rights reserved.
AD8038/AD8039–SPECIFICATIONS
(T = 25 C, V =
A
S
5 V, R
L
= 2 k , Gain = +1, unless otherwise noted.)
Min
300
Typ
350
175
100
45
425
50
18
Max
Unit
MHz
MHz
MHz
MHz
V/µs
ns
ns
Parameter
DYNAMIC PERFORMANCE
–3 dB Bandwidth
Conditions
G = +1, V
O
= 0.5 V p-p
G = +2, V
O
= 0.5 V p-p
G = +1, V
O
= 2 V p-p
G = +2, V
O
= 0.2 V p-p
G = +1, V
O
= 2 V Step, R
L
= 2 kΩ
G = +2, 1 V Overdrive
G = +2, V
O
= 2 V Step
Bandwidth for 0.1 dB Flatness
Slew Rate
Overdrive Recovery Time
Settling Time to 0.1%
NOISE/HARMONIC PERFORMANCE
SFDR
Second Harmonic
Third Harmonic
Second Harmonic
Third Harmonic
Crosstalk, Output-to-Output (AD8039)
Input Voltage Noise
Input Current Noise
DC PERFORMANCE
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Bias Current Drift
Input Offset Current
Open-Loop Gain
INPUT CHARACTERISTICS
Input Resistance
Input Capacitance
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
OUTPUT CHARACTERISTICS
DC Output Voltage Swing
Capacitive Load Drive
POWER SUPPLY
Operating Range
Quiescent Current per Amplifier
Power Supply Rejection Ratio
POWER-DOWN DISABLE*
Turn-On Time
Turn-Off Time
Disable Voltage—Part is OFF
Disable Voltage—Part is ON
Disabled Quiescent Current
Disabled In/Out Isolation
*Only
available in AD8038 SOIC-8 package.
Specifications subject to change without notice.
400
f
C
= 1 MHz, V
O
= 2 V p-p, R
L
= 2 kΩ
f
C
= 1 MHz, V
O
= 2 V p-p, R
L
= 2 kΩ
f
C
= 5 MHz, V
O
= 2 V p-p, R
L
= 2 kΩ
f
C
= 5 MHz, V
O
= 2 V p-p, R
L
= 2 kΩ
f = 5 MHz, G = +2
f = 100 kHz
f = 100 kHz
–90
–92
–65
–70
–70
8
600
0.5
4.5
400
3
25
70
10
2
±
4
67
±
4
20
3.0
12
1.5
3
750
dBc
dBc
dBc
dBc
dB
nV/√Hz
fA/√Hz
mV
µV/°C
nA
nA/°C
±
nA
dB
MΩ
pF
V
dB
V
pF
V
mA
dB
dB
ns
ns
V
V
mA
dB
V
O
=
±
2.5 V
R
L
= 1 kΩ
V
CM
=
±
2.5 V
R
L
= 2 kΩ, Saturated Output
30% Overshoot, G = +2
61
– Supply
+ Supply
–71
–64
1.0
–77
–70
180
700
+V
S
– 4.5
+V
S
– 2.5
0.2
–60
f = 1 MHz
–2–
REV. F
AD8038/AD8039
SPECIFICATIONS
(T = 25 C, V = 5 V, R = 2 k
A
S
L
to V
S
/2, Gain = +1, unless otherwise noted.)
Min
275
Typ
300
150
30
45
365
50
18
Max
Unit
MHz
MHz
MHz
MHz
V/µs
ns
ns
Parameter
DYNAMIC PERFORMANCE
–3 dB Bandwidth
Conditions
G = +1, V
O
= 0.2 V p-p
G = +2, V
O
= 0.2 V p-p
G = +1, V
O
= 2 V p-p
G = +2, V
O
= 0.2 V p-p
G = +1, V
O
= 2 V Step, R
L
= 2 kΩ
G = +2, 1 V Overdrive
G = +2, V
O
= 2 V Step
Bandwidth for 0.1 dB Flatness
Slew Rate
Overdrive Recovery Time
Settling Time to 0.1%
NOISE/HARMONIC PERFORMANCE
SFDR
Second Harmonic
Third Harmonic
Second Harmonic
Third Harmonic
Crosstalk, Output-to-Output
Input Voltage Noise
Input Current Noise
DC PERFORMANCE
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Bias Current Drift
Input Offset Current
Open-Loop Gain
INPUT CHARACTERISTICS
Input Resistance
Input Capacitance
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
OUTPUT CHARACTERISTICS
DC Output Voltage Swing
Capacitive Load Drive
POWER SUPPLY
Operating Range
Quiescent Current per Amplifier
Power Supply Rejection Ratio
POWER-DOWN DISABLE*
Turn-On Time
Turn-Off Time
Disable Voltage—Part is OFF
Disable Voltage—Part is ON
Disabled Quiescent Current
Disabled In/Out Isolation
*Only
available in AD8038 SOIC-8 package.
Specifications subject to change without notice.
340
f
C
= 1 MHz, V
O
= 2 V p-p, R
L
= 2 kΩ
f
C
= 1 MHz, V
O
= 2 V p-p, R
L
= 2 kΩ
f
C
= 5 MHz, V
O
= 2 V p-p, R
L
= 2 kΩ
f
C
= 5 MHz, V
O
= 2 V p-p, R
L
= 2 kΩ
f = 5 MHz, G = +2
f = 100 kHz
f = 100 kHz
–82
–79
–60
–67
–70
8
600
0.8
3
400
3
30
70
10
2
1.0–4.0
65
0.9–4.1
20
3
–65
0.9
–71
210
700
+V
S
– 4.5
+V
S
– 2.5
0.2
–60
12
1.5
3
750
dBc
dBc
dBc
dBc
dB
nV/√Hz
fA/√Hz
mV
µV/°C
nA
nA/°C
±
nA
dB
MΩ
pF
V
dB
V
pF
V
mA
dB
ns
ns
V
V
mA
dB
V
O
=
±
2.5 V
R
L
= 1 kΩ
V
CM
=
±
1 V
R
L
= 2 kΩ, Saturated Output
30% Overshoot
59
f = 1 MHz
REV. F
–3–
AD8038/AD8039
MAXIMUM POWER DISSIPATION – W
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 2
Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±
V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .
±
4 V
Storage Temperature . . . . . . . . . . . . . . . . . . . . –65°C to +125°C
Operating Temperature Range . . . . . . . . . . . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . . . 300°C
*Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2.0
1.5
SOIC-8
SOT-23-8
1.0
SC70-5
0.5
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8038/AD8039
package is limited by the associated rise in junction temperature
(T
J
) on the die. The plastic encapsulating the die will locally reach
the junction temperature. At approximately 150°C, which is the
glass transition temperature, the plastic will change its properties.
Even temporarily exceeding this temperature limit may change the
stresses that the package exerts on the die, permanently shifting the
parametric performance of the AD8038/AD8039. Exceeding a
junction temperature of 175°C for an extended period of time can
result in changes in the silicon devices, potentially causing failure.
The still-air thermal properties of the package and PCB (
JA
),
ambient temperature (T
A
), and total power dissipated in the package
(P
D
) determine the junction temperature of the die. The junction
temperature can be calculated as follows:
0
–55
–25
5
35
65
95
AMBIENT TEMPERATURE – C
125
Figure 2. Maximum Power Dissipation vs.
Temperature for a 4-Layer Board
RMS output voltages should be considered. If R
L
is referenced to V
S–
, as
in single-supply operation, then the total drive power is V
S
I
OUT
.
If the rms signal levels are indeterminate, consider the worst case,
when
V
OUT
=
V
S
/4 for
R
L
to midsupply:
P
D
=
(
S
×
I
S
)
+
(
S
/ 4
)
/ R
L
V
V
2
In single-supply operation with
R
L
referenced to
V
S–
, worst case is
V
OUT
=
V
S
/2.
Airflow will increase heat dissipation, effectively reducing
JA
. Also,
more metal directly in contact with the package leads from metal
traces, through-holes, ground, and power planes will reduce the
JA
.
Care must be taken to minimize parasitic capacitances at the input
leads of high speed op amps as discussed in the board layout section.
Figure 2 shows the maximum safe power dissipation in the package
versus the ambient temperature for the SOIC-8 (125°C/W), SC70-5
(210°C/W), and SOT-23-8 (160°C/W) package on a JEDEC standard
4-layer board.
JA
values are approximations.
OUTPUT SHORT CIRCUIT
Shorting the output to ground or drawing excessive current from
the AD8038/AD8039 will likely cause a catastrophic failure.
T
J
=
T
A
+
(
P
D
× θ
J
A
)
The power dissipated in the package (P
D
) is the sum of the quiescent
power dissipation and the power dissipated in the package due to the
load drive for all outputs. The quiescent power is the voltage between
the supply pins (V
S
) multiplied by the quiescent current (I
S
). Assum-
ing the load (R
L
) is referenced to midsupply, then the total drive power
is
V
S
/2
I
OUT,
some of which is dissipated in the package and some
in the load (V
OUT
I
OUT
). The difference between the total drive
power and the load power is the drive power dissipated in the package.
P
D
= quiescent power + (total drive power – load power)
P
D
=
[
V
S
×
I
S
]
+
(
S
/
2
)
×
(
OUT
/R
L
)
– V
OUT
/R
L
V
V
2
[
]
[
]
ORDERING GUIDE
Model
AD8038AR
AD8038AR-REEL
AD8038AR-REEL7
AD8038AKS-R2
AD8038AKS-REEL
AD8038AKS-REEL7
AD8039AR
AD8039AR-REEL
AD8039AR-REEL7
AD8039ART-R2
AD8039ART-REEL
AD8039ART-REEL7
Temperature Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
Package Description
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
5-Lead SC70
5-Lead SC70
5-Lead SC70
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOT-23
8-Lead SOT-23
8-Lead SOT-23
Package Outline
R-8
R-8
R-8
KS-5
KS-5
KS-5
R-8
R-8
R-8
RT-8
RT-8
RT-8
Branding Information
HUA
HUA
HUA
HYA
HYA
HYA
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8038/AD8039 features proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4–
REV. F
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