SE4607 datasheet, PDF - EEWORLD Datasheet

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SE4607: DescriptionDrain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 4.2A, 2.8A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 45mΩ @ 2.8A, 4.5V Maximum power dissipation (Ta=25°C): 1.2W Type: N-channel and P-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size1MB，9 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SE4607 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 4.2A, 2.8A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 45mΩ @ 2.8A, 4.5V Maximum power dissipation (Ta=25°C): 1.2W Type: N-channel and P-channel

SE4607 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	20V
Continuous drain current (Id) at 25°C	4.2A,2.8A
Gate-source threshold voltage	1.2V @ 250uA
Drain-source on-resistance	45mΩ @ 2.8A,4.5V
Maximum power dissipation (Ta=25°C)	1.2W
type	N channel and P channel

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