SA30A datasheet, PDF - EEWORLD Datasheet

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SA30A: DescriptionTVS Diode; CategoryDiscrete semiconductor diode; File Size57KB，4 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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SA30A Overview

TVS Diode

Features

Product Name: TVS Diode

Product model: SA30A

product features:

500W Peak pulse power capability*500W Peak pulse power capability

Excellent clamping capability

Low incremental surge resistance

Fast response time:Typically less than 1.0ps from 0v to VBR for unidirection and 5.0 ns for bidirectional types

Mechanical data:

Cases: Molded plastic

Epoxy:UL94V-0 rate flame retardant

Lead :Axial leads, solderable per MIL- STD-202, Method 208 guaranteed

Polarity: Color band denotes cathode except Bipolar

Mounting position :Any

Weight:0.40 gram

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

product data:

Peak Power Dissipation PPK Forward power consumption: Minimun 500W

Peak Forward Surge Current IFSM Forward pulse current: 70A

Maximum Instaneous Forward Voltage at 50A for Unidirectional Only VF Maximum forward voltage drop: 3.5 V

Steady State Power Dissipation PM（AV）：1.0W

Operating and Storage Temperature Range Tj. Tstg Operating Junction Temperature: -55 to +150℃

Breakdown Voltage V(BR) Breakdown Voltage: Min: 33.3V Max: 36.8V

Test Current at IT Test current: 1.0mA

Stand-Off Voltage Vwm Stand-Off Voltage: 30.0V

Max Reverse Leakage at Vwm IR Maximum reverse leakage current: 1.0μA

Max Peak Pulse Current IPPM Maximum peak pulse current: 10.8A

Max Clamping Voltage at IPPM VC 最大箝位电压：48.4V

Maximum Temperature Coefficient of VBR: 36.0MV/℃

Package: DO-15

SA30A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknow
Breakdown voltage nominal value	35.05 V
Maximum clamping voltage	48.4 V
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
polarity	UNIDIRECTIONAL
Maximum repetitive peak reverse voltage	30 V
surface mount	NO

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