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SA17

Description
TVS Diode
CategoryDiscrete semiconductor    diode   
File Size57KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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SA17 Overview

TVS Diode

Features

Product Name: TVS Diode


Product model: SA17


product features:


500W Peak pulse power capability*500W Peak pulse power capability


Excellent clamping capability


Low incremental surge resistance


Fast response time:Typically less than 1.0ps from 0v to VBR for unidirection and 5.0 ns for bidirectional types



Mechanical data:


Cases: Molded plastic


Epoxy:UL94V-0 rate flame retardant


Lead :Axial leads, solderable per MIL- STD-202, Method 208 guaranteed


Polarity: Color band denotes cathode except Bipolar


Mounting position :Any


Weight:0.40 gram



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.



product data:


Peak Power Dissipation PPK Forward power consumption: Minimun 500W


Peak Forward Surge Current IFSM Forward pulse current: 70A


Maximum Instaneous Forward Voltage at 50A for Unidirectional Only VF Maximum forward voltage drop: 3.5 V


Steady State Power Dissipation PM(AV):1.0W


Operating and Storage Temperature Range Tj. Tstg Operating Junction Temperature: -55 to +150℃


Breakdown Voltage V(BR) Breakdown Voltage: Min: 18.9V Max: 23.1V


Test Current at IT Test current: 1.0mA


Stand-Off Voltage Vwm Stand-Off Voltage: 17.0V


Max Reverse Leakage at Vwm IR Maximum reverse leakage current: 1.0μA


Max Peak Pulse Current IPPM Maximum peak pulse current: 17.0A


Max Clamping Voltage at IPPM VC 最大箝位电压:30.5V


Maximum Temperature Coefficient of VBR: 20.0MV/℃



Package: DO-15


SA17 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknow
Breakdown voltage nominal value21 V
Maximum clamping voltage30.5 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage17 V
surface mountNO
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