P6SMBJ60C datasheet, PDF - EEWORLD Datasheet

P6SMBJ60C: Description600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA; CategoryDiscrete semiconductor diode; File Size99KB，5 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	DO-214AA
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	LOW INDUCTANCE, UL RECOGNIZED
Maximum breakdown voltage	84.5 V
Minimum breakdown voltage	66.7 V
Breakdown voltage nominal value	75.6 V
Maximum clamping voltage	107 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	60 V
surface mount	YES
technology	AVALANCHE
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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