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GR1J

Description
Rectifier Diode, 1 Element, 1A, 600V V(RRM)
CategoryDiscrete semiconductor    diode   
File Size136KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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GR1J Overview

Rectifier Diode, 1 Element, 1A, 600V V(RRM)

GR1J Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionR-PDSO-C2
Reach Compliance Codeunknown
Is SamacsysN
Other featuresFREE WHEELING DIODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.25 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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GR1A THRU GR1M
快恢复整流二极管
Fast Recovery Rectifier Diode
■特征
Features
■外½尺寸和印记
Outline Dimensions and Mark
DO-214AC(SMA)
.062(1.58)
.049(1.25)
.187(4.75)
.167(4.25)
.091(2.30)
.075(1.90)
.056(1.41)
.030(0.76)
.012(0.31)
.006(0.15)
.111(2.83)
.094(2.40)
I
o
1.0A
V
RRM
50V-1000V
耐正向浪涌电流½力高
High surge current capability
封装:模压塑料
Cases: Molded plastic
Mounting Pad Layout
0.065
(1.66)
0.080
(2.04)
0.077(1.96)
0.220
(5.58)
■用途
Applications
●整流用
Rectifier
.008(0.20)
.003(0.08)
.208(5.28)
.194(4.93)
Dimensions in inches and (millimeters)
■极限值(绝对最大额定值)
Limiting Values (Absolute Maximum Rating)
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse Voltage
正向平均电流
Average Forward Current
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward
Current
结温
Junction Temperature
储存温度
Storage Temperature
符号
Symbol
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
单½
Unit
V
A
测试条件
Test Conditions
A
50
正弦半波60Hz,
电阻负½½,
L
=90℃
T
60HZ Half-sine wave, Resistance
load, T
L
=90℃
正弦半波60Hz,
一个周期,
Ta=25℃
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
GR1
B
100
D
200
G
400
1.0
J
600
K
800
M
1000
A
30
-55~+150
-55 ~ +150
■电特性
(Ta=25℃ 除非另有规定)
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
参数名称
Item
正向峰值电压
Peak Forward Voltage
最大反向恢复时间
Maximum reverse recovery
time
反向漏电流
Peak Reverse Current
热阻(典型)
Thermal
Resistance(Typical)
符号
Symbol
V
F
t
rr
I
RRM1
I
RRM2
R
θ
J-A
单½
Unit
V
ns
μA
测试条件
Test Condition
I
F
=1.0A
I
F
=0.5A,I
R
=1.0A,I
rr
=0.25A
V
RM
=V
RRM
Ta =25℃
Ta =125℃
GR1
A
B
D
G
1.3
150
5
50
105
1)
32
1)
J
K
M
250
500
/W
R
θ
J-L
结和环境之间
Between junction and ambient
结和终端之间
Between junction and terminal
备注:Notes:
1)
热阻从结到环境及从结到引线,在电路板的
0.2" x 0.2" (5.0毫米 x 5.0毫米)铜垫片区
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
Document Number 0128
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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