BCX56 datasheet, PDF - EEWORLD Datasheet

BCX56: File Size501KB，3 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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BCX56 Parametric

Parameter Name	Attribute value
Transistor type	NPN
Collector-emitter breakdown voltage (Vceo)	80V
Collector current (Ic)	1A
Power(Pd)	500mW
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)	500mV@500mA,50mA
DC current gain (hFE@Ic,Vce)	100@150mA,2V
Characteristic frequency (fT)	130MHz
Operating temperature	+150℃@(Tj)

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

BCX54,BCX55,BCX56

TRANSISTOR (NPN)

1. BASE

2. COLLECTOR

3. EMITTER

FEATURES

PNP Complements to BCX51,BCX52,BCX53

Low Voltage

High Current

APPLICATIONS

Driver Stages of Audio Amplifiers

MARKING:BCX54:BA, BCX54-10:BC, BCX54-16:BD

BCX55:BE, BCX55-10:BG, BCX55-16BM

BCX56:B H, BCX56-10:BK, BCX56-16:BL

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

Parameter

BCX54

Collector-Base Voltage

BCX55

BCX56

CEO

EBO

θJA

stg

Collector-Emitter Voltage

BCX54

BCX55

BCX56

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

100

500

250

150

-55~+150

Unit

℃/W

℃

C,Apr,2012

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